Invention Application
- Patent Title: LOW POWER MULTI-STACKED POWER AMPLIFIER
- Patent Title (中): 低功率多层功率放大器
-
Application No.: US14286877Application Date: 2014-05-23
-
Publication No.: US20150340992A1Publication Date: 2015-11-26
- Inventor: Victor Korol , Shu-Hsien Liao
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H03F3/21 ; H03F3/193

Abstract:
An apparatus includes a plurality of stacked transistors in a multi-stacked power amplifier. At least one transistor of the plurality of stacked transistors is configured to operate in a first mode and in a second mode. The at least one transistor of the plurality of stacked transistors is configured to be biased by a low power biasing network to operate in the first mode.
Public/Granted literature
- US09419560B2 Low power multi-stacked power amplifier Public/Granted day:2016-08-16
Information query
IPC分类: