公开(公告)号：US20170104459A1

公开(公告)日：2017-04-13

申请号：US14880631

申请日：2015-10-12

Applicant: QUALCOMM Incorporated

Inventor： Victor Korol ,  Mina Iskander

IPC: H03F1/56 ,  H03F3/21 ,  H03F3/193 ,  H01F27/28 ,  H03H7/38

CPC classification number: H03F1/565 ,  H01F17/0013 ,  H01F27/288 ,  H01F27/32 ,  H01F27/36 ,  H01F2017/008 ,  H03F3/193 ,  H03F3/211 ,  H03F2200/451 ,  H03F2203/21106 ,  H03H7/38

Abstract: Exemplary embodiments of the present disclosure are related to inductor shielding. A device may include an inductor and a plurality of conductive strips extending across the inductor. At least a first conductive strip of the plurality of conductive strips is physically isolated from at least a second conductive strip of the plurality of conductive strips in a region of overlay of the first and second conductive strips.

公开(公告)号：US20150340992A1

公开(公告)日：2015-11-26

申请号：US14286877

申请日：2014-05-23

Applicant: QUALCOMM Incorporated

Inventor： Victor Korol ,  Shu-Hsien Liao

IPC: H03F1/02 ,  H03F3/21 ,  H03F3/193

CPC classification number: H03F1/0205 ,  H03F1/0211 ,  H03F1/0261 ,  H03F1/0272 ,  H03F1/223 ,  H03F1/523 ,  H03F3/193 ,  H03F3/21 ,  H03F3/245 ,  H03F2200/18 ,  H03F2200/27 ,  H03F2200/451 ,  H03F2200/513 ,  H03F2200/61

Abstract: An apparatus includes a plurality of stacked transistors in a multi-stacked power amplifier. At least one transistor of the plurality of stacked transistors is configured to operate in a first mode and in a second mode. The at least one transistor of the plurality of stacked transistors is configured to be biased by a low power biasing network to operate in the first mode.

Abstract translation: 一种装置包括多层功率放大器中的多个堆叠晶体管。 多个堆叠晶体管中的至少一个晶体管被配置为以第一模式和第二模式工作。 多个堆叠晶体管中的至少一个晶体管被配置为被低功率偏置网络偏置以在第一模式中操作。

公开(公告)号：US10075138B2

公开(公告)日：2018-09-11

申请号：US14880631

申请日：2015-10-12

Applicant: QUALCOMM Incorporated

Inventor： Victor Korol ,  Mina Iskander

IPC: H01F27/36 ,  H01F27/32 ,  H03F1/56 ,  H01F27/28 ,  H03F3/193 ,  H03F3/21 ,  H03H7/38 ,  H01F17/00

CPC classification number: H03F1/565 ,  H01F17/0013 ,  H01F27/288 ,  H01F27/32 ,  H01F27/36 ,  H01F2017/008 ,  H03F3/193 ,  H03F3/211 ,  H03F2200/451 ,  H03F2203/21106 ,  H03H7/38

Abstract: Exemplary embodiments of the present disclosure are related to inductor shielding. A device may include an inductor and a plurality of conductive strips extending across the inductor. At least a first conductive strip of the plurality of conductive strips is physically isolated from at least a second conductive strip of the plurality of conductive strips in a region of overlay of the first and second conductive strips.

公开(公告)号：US09419560B2

公开(公告)日：2016-08-16

申请号：US14286877

申请日：2014-05-23

Applicant: QUALCOMM Incorporated

Inventor： Victor Korol ,  Shu-Hsien Liao

IPC: H03F3/04 ,  H03F1/02 ,  H03F3/193 ,  H03F3/21 ,  H03F1/22 ,  H03F1/52 ,  H03F3/24

CPC classification number: H03F1/0205 ,  H03F1/0211 ,  H03F1/0261 ,  H03F1/0272 ,  H03F1/223 ,  H03F1/523 ,  H03F3/193 ,  H03F3/21 ,  H03F3/245 ,  H03F2200/18 ,  H03F2200/27 ,  H03F2200/451 ,  H03F2200/513 ,  H03F2200/61

Abstract: An apparatus includes a plurality of stacked transistors in a multi-stacked power amplifier. At least one transistor of the plurality of stacked transistors is configured to operate in a first mode and in a second mode. The at least one transistor of the plurality of stacked transistors is configured to be biased by a low power biasing network to operate in the first mode.

Abstract translation: 一种装置包括多层功率放大器中的多个堆叠晶体管。 多个堆叠晶体管中的至少一个晶体管被配置为以第一模式和第二模式工作。 多个堆叠晶体管中的至少一个晶体管被配置为被低功率偏置网络偏置以在第一模式中操作。