Methods of operating nonvolatile memory devices include counting a number of consecutive read operations performed on a first memory region within the nonvolatile memory device, and executing a page reclaim operation on the first memory region in response to detecting that a count in the number of consecutive read operations meets or exceeds a threshold count. A page reclaim operation may include checking an error bit level within a page of data stored in a multi-level cell block within the memory device. The page reclaim operation may further include moving page data from the multi-level cell block to a single-level cell block in the memory device and error correcting the page data during the moving.