公开(公告)号：US20150355845A1

公开(公告)日：2015-12-10

申请号：US14729518

申请日：2015-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-Jin Lee ,  Seonghun Kim ,  Jeong-Han Kim ,  Sunghee Lee ,  Sanggyu Jang ,  Hong Suk Choi

IPC: G06F3/06

CPC classification number: G06F3/0679 ,  G06F3/0616 ,  G06F3/0659 ,  G06F12/0246 ,  G11C16/3418 ,  G11C16/349 ,  G11C16/3495 ,  G11C2211/5641

Abstract: Methods of operating nonvolatile memory devices include counting a number of consecutive read operations performed on a first memory region within the nonvolatile memory device, and executing a page reclaim operation on the first memory region in response to detecting that a count in the number of consecutive read operations meets or exceeds a threshold count. A page reclaim operation may include checking an error bit level within a page of data stored in a multi-level cell block within the memory device. The page reclaim operation may further include moving page data from the multi-level cell block to a single-level cell block in the memory device and error correcting the page data during the moving.

Abstract translation: 操作非易失性存储器件的方法包括对在非易失性存储器件内的第一存储器区域执行的连续读取操作的数量进行计数，以及响应于检测到连续读取数量的计数，对第一存储器区域执行页面回收操作 操作满足或超过阈值计数。 页面回收操作可以包括检查存储在存储器设备内的多级单元块中的数据页内的错误位级别。 页面回收操作可以进一步包括将页面数据从多级单元块移动到存储器件中的单级单元块，并且在移动期间纠错页面数据。