发明申请
US20150357480A1 STABLE METAL-OXIDE THIN FILM TRANSISTOR AND METHOD OF MAKING
审中-公开
稳定的金属氧化物薄膜晶体管及其制备方法
- 专利标题： STABLE METAL-OXIDE THIN FILM TRANSISTOR AND METHOD OF MAKING
- 专利标题（中）： 稳定的金属氧化物薄膜晶体管及其制备方法
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申请号： US14829812申请日： 2015-08-19
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公开(公告)号： US20150357480A1公开(公告)日： 2015-12-10
- 发明人: Gang Yu , Chan-Long Shieh , Tian Xiao , Fatt Foong , Juergen Musulf , Karl Birger Kristoffer Ottosson
- 申请人： Gang Yu , Chan-Long Shieh , Tian Xiao , Fatt Foong , Juergen Musulf , Karl Birger Kristoffer Ottosson
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/28 ; H01L29/49 ; H01L29/66 ; H01L29/417 ; H01L29/423 ; H01L21/283 ; H01L21/324
摘要：
A thin film semiconductor device has a semiconductor layer including a composite/blend/mixture of an amorphous/nanocrystalline semiconductor ionic metal oxide and an amorphous/nanocrystalline non-semiconducting covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a semiconductive channel, and agate terminal is positioned in communication with the semiconductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.
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