公开(公告)号：US20150357480A1

公开(公告)日：2015-12-10

申请号：US14829812

申请日：2015-08-19

申请人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong ,  Juergen Musulf ,  Karl Birger Kristoffer Ottosson

发明人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong ,  Juergen Musulf ,  Karl Birger Kristoffer Ottosson

IPC分类号： H01L29/786 ,  H01L21/28 ,  H01L29/49 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423 ,  H01L21/283 ,  H01L21/324

CPC分类号： H01L29/78693 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/324 ,  H01L29/42364 ,  H01L29/7869 ,  H01L51/052

摘要： A thin film semiconductor device has a semiconductor layer including a composite/blend/mixture of an amorphous/nanocrystalline semiconductor ionic metal oxide and an amorphous/nanocrystalline non-semiconducting covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a semiconductive channel, and agate terminal is positioned in communication with the semiconductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.

摘要翻译： 薄膜半导体器件具有包括非晶/纳米晶体半导体离子金属氧化物和非晶/纳米晶体非半导体共价金属氧化物的复合/共混物/混合物的半导体层。 一对端子定位成与半导体层连通并且限定半导体通道，并且玛瑙端子被定位成与半导体沟道连通并进一步定位成控制沟道的传导。 本发明还包括在沉积过程中沉积包括使用氮气的混合物的方法，以控制所得半导体层中的载流子浓度。