Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14831892Application Date: 2015-08-21
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Publication No.: US20150364473A1Publication Date: 2015-12-17
- Inventor: Ju-Youn Kim , Kwang-You Seo
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2012-0050344 20120511
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/423 ; H01L29/49
Abstract:
A semiconductor device includes an interlayer insulating film formed on a substrate and including a trench, a gate insulating film formed in the trench, a work function adjusting film formed on the gate insulating film in the trench along sidewalls and a bottom surface of the trench, and including an inclined surface having an acute angle with respect to the sidewalls of the trench, and a metal gate pattern formed on the work function adjusting film in the trench to fill up the trench.
Public/Granted literature
- US09627380B2 Semiconductor devices having work function adjusting films with chamfered top surfaces Public/Granted day:2017-04-18
Information query
IPC分类:
