发明申请
- 专利标题： RELIABILITY IN MERGEABLE SEMICONDUCTOR DEVICES
- 专利标题（中）： 可合理的半导体器件的可靠性
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申请号： US14832139申请日： 2015-08-21
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公开(公告)号： US20150364576A1公开(公告)日： 2015-12-17
- 发明人: Zhihong Zhang , Daniel J. Blomberg , Hongning Yang , Jiang-Kai Zuo
- 申请人： Zhihong Zhang , Daniel J. Blomberg , Hongning Yang , Jiang-Kai Zuo
- 申请人地址： US TX Austin
- 专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/06 ; H01L29/10 ; H01L21/8234 ; H01L21/265 ; H01L29/08
摘要：
A method of fabricating a transistor device having a channel of a first conductivity type formed during operation in a body region having a second conductivity type includes forming a first well region of the body region in a semiconductor substrate, performing a first implantation procedure to counter-dope the first well region with dopant of the first conductivity type to define a second well region of the body region, and performing a second implantation procedure to form a source region in the first well region and a drain region in the second well region.
公开/授权文献
- US09640635B2 Reliability in mergeable semiconductor devices 公开/授权日：2017-05-02
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