Invention Application
US20150364682A1 Complementary resistance switch, contact-connected polycrystalline piezo- or ferroelectric thin-film layer, method for encrypting a bit sequence 有权
互补电阻开关,接触式多晶压电或铁电薄膜层,加密位序列的方法

  • Patent Title: Complementary resistance switch, contact-connected polycrystalline piezo- or ferroelectric thin-film layer, method for encrypting a bit sequence
  • Patent Title (中): 互补电阻开关,接触式多晶压电或铁电薄膜层,加密位序列的方法
  • Application No.: US14761319
    Application Date: 2014-01-16
  • Publication No.: US20150364682A1
    Publication Date: 2015-12-17
  • Inventor: Tiangui YOUHeidemarie SCHMIDTNan DUDanilo BUERGERIlona SKORUPA
  • Applicant: HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF E.V.
  • Priority: DE102013200615.2 20130116; DE102013201443.0 20130129
  • International Application: PCT/EP2014/050829 WO 20140116
  • Main IPC: H01L45/00
  • IPC: H01L45/00 G11C13/00
Complementary resistance switch, contact-connected polycrystalline piezo- or ferroelectric thin-film layer, method for encrypting a bit sequence
Abstract:
Disclosed is a complementary resistor switch (3) comprising two outer contacts, between which two piezo- or ferroelectric layers (11a and 11b) having an inner common contact are situated. At least one region (11′, 11″) of the layers is modified, either the outer contacts are rectifying (S) and the inner contact is non-rectifying (0), or vice versa, the modified regions are formed at the rectifying contacts, the layers have different strain-dependent structural phases with different band gaps and/or different polarization charges, and the electrical conductivity of the layers is different. Also disclosed are a connectable resistor structure having at least one Schottky contact at two adjoining piezo- or ferroelectric layers, a polycrystalline piezo- or ferroelectric layer comprising modified crystallites, and a method and circuits for encrypting and decrypting a bit sequence.
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