公开(公告)号：US20150364682A1

公开(公告)日：2015-12-17

申请号：US14761319

申请日：2014-01-16

Applicant: HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF E.V.

Inventor： Tiangui YOU ,  Heidemarie SCHMIDT ,  Nan DU ,  Danilo BUERGER ,  Ilona SKORUPA

IPC: H01L45/00 ,  G11C13/00

CPC classification number: H01L45/147 ,  G09C1/00 ,  G11C13/0007 ,  H01L27/2472 ,  H01L31/0749 ,  H01L45/065 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1641 ,  H01L45/165 ,  H03K19/08 ,  H04L9/00 ,  H04L9/065 ,  H04L2209/12 ,  Y02E10/541

Abstract: Disclosed is a complementary resistor switch (3) comprising two outer contacts, between which two piezo- or ferroelectric layers (11a and 11b) having an inner common contact are situated. At least one region (11′, 11″) of the layers is modified, either the outer contacts are rectifying (S) and the inner contact is non-rectifying (0), or vice versa, the modified regions are formed at the rectifying contacts, the layers have different strain-dependent structural phases with different band gaps and/or different polarization charges, and the electrical conductivity of the layers is different. Also disclosed are a connectable resistor structure having at least one Schottky contact at two adjoining piezo- or ferroelectric layers, a polycrystalline piezo- or ferroelectric layer comprising modified crystallites, and a method and circuits for encrypting and decrypting a bit sequence.

Abstract translation: 公开了一种互补电阻器开关（3），其包括两个外部触点，在其间位于具有内部公共触点的两个压电层或铁电层（11a和11b）之间。 这些层的至少一个区域（11'，11“）被修改，外部触点是整流（S），内部触点是非整流（0），反之亦然，修正区域形成在整流 接触，这些层具有不同的带隙和/或不同极化电荷的不同的应变依赖结构相，并且层的导电性不同。 还公开了一种可连接的电阻器结构，其在两个相邻的压电或铁电层具有至少一个肖特基接触，包含经修改的微晶的多晶压电或铁电层，以及用于加密和解密位序列的方法和电路。

公开(公告)号：US20210305961A1

公开(公告)日：2021-09-30

申请号：US17058363

申请日：2019-05-07

Applicant: HELMHOLTZ-ZENTRUM DRESDEN - ROSSENDORF E.V.

Inventor： Heidemarie SCHMIDT ,  Nan DU ,  Agnieszka BOGUSZ ,  Stephan KRÜGER ,  Ilona SKORUPA

IPC: H03H7/01

Abstract: A method for reconfiguration of a vortex density in a rare earth manganate, to a non-volatile impedance switch having reconfigurable impedance, and to the use thereof as micro-inductance is disclosed. A unique voltage-time profile is applied between a first and a second electrically conductive contact attached to the rare earth manganate, such that the rare earth manganate passes through an ordering temperature in a region of an electric field forming between the two electrically conductive contacts during a cooling process during and after application of the voltage pulse or the voltage ramp, and the vortex density is thus influenced and adjusted locally in the region of the electric field forming between the two electrically conductive contacts.