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US20150380354A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
半导体器件及其制造方法

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
摘要:
A semiconductor device may include a substrate having a lower via-hole, an epitaxial layer having an opening exposing a top surface of the substrate, a semiconductor chip disposed on the top surface of the substrate and including first, second, and third electrodes, an upper metal layer connected to the first electrode, a supporting substrate disposed on the upper metal layer and having an upper via-hole, an upper pad disposed on the substrate and extending into the upper via-hole, a lower pad connected to the second electrode in the opening, and a lower metal layer covering a bottom surface of the substrate and connected to the lower pad through the lower via-hole.
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