发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US14845435申请日: 2015-09-04
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公开(公告)号: US20150380354A1公开(公告)日: 2015-12-31
- 发明人: Byoung-Gue MIN , Sang Choon KO , Jong-Won LIM , Hokyun AHN , Hyung Sup YOON , Jae Kyoung MUN , Eun Soo NAM
- 申请人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 申请人地址: KR Daejeon
- 专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址: KR Daejeon
- 优先权: KR10-2012-0114266 20121015; KR10-2013-0029769 20130320
- 主分类号: H01L23/535
- IPC分类号: H01L23/535 ; H01L23/48
摘要:
A semiconductor device may include a substrate having a lower via-hole, an epitaxial layer having an opening exposing a top surface of the substrate, a semiconductor chip disposed on the top surface of the substrate and including first, second, and third electrodes, an upper metal layer connected to the first electrode, a supporting substrate disposed on the upper metal layer and having an upper via-hole, an upper pad disposed on the substrate and extending into the upper via-hole, a lower pad connected to the second electrode in the opening, and a lower metal layer covering a bottom surface of the substrate and connected to the lower pad through the lower via-hole.
公开/授权文献
- US09490214B2 Semiconductor device and method of fabricating the same 公开/授权日:2016-11-08