Invention Application
US20150380403A1 Semiconductor Device with Thermally Grown Oxide Layer Between Field and Gate Electrode and Method of Manufacturing
有权
具有场强和栅电极之间的热生长氧化物层的半导体器件及其制造方法
- Patent Title: Semiconductor Device with Thermally Grown Oxide Layer Between Field and Gate Electrode and Method of Manufacturing
- Patent Title (中): 具有场强和栅电极之间的热生长氧化物层的半导体器件及其制造方法
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Application No.: US14745908Application Date: 2015-06-22
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Publication No.: US20150380403A1Publication Date: 2015-12-31
- Inventor: Yulia Kotsar , Sven Lanzerstorfer , Robert Zink
- Applicant: Infineon Technologies AG
- Priority: DE102014108966.9 20140626
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/40 ; H01L29/66 ; H01L21/266 ; H01L21/8234 ; H01L21/265 ; H01L21/02 ; H01L21/311 ; H01L29/78 ; H01L29/423
Abstract:
A first trench and a second trench, both extending from a main surface into a semiconductor layer, are filled with a first fill material. The first fill material is selectively recessed in the first trench. A mask is formed that covers the second trench and that exposes the first trench. An oxidation rate promoting material is implanted into an exposed first section of the recessed fill material in the first trench. The mask is removed. Then the first fill material is thermally oxidized, wherein on the first section an oxidation rate is at least twice as high as on non-implanted sections of the first fill material.
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Information query
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