发明申请
- 专利标题： METHODS OF MAKING THREE DIMENSIONAL NAND DEVICES
- 专利标题（中）： 制造三维NAND器件的方法
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申请号： US14319591申请日： 2014-06-30
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公开(公告)号： US20150380424A1公开(公告)日： 2015-12-31
- 发明人: Raghuveer S. Makala , Yao-Sheng Lee , Senaka Krishna Kanakamedala , Yanli Zhang , George Matamis , Johann Alsmeier
- 申请人： SanDisk Technologies, Inc.
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L21/02 ; H01L21/28 ; H01L21/285 ; H01L29/49 ; H01L29/51
摘要：
A method of making a three dimensional NAND string includes providing a stack of alternating first material layers and second material layers over a substrate. The method further includes forming a front side opening in the stack, forming a tunnel dielectric in the front side opening, forming a semiconductor channel in the front side opening over the tunnel dielectric and forming a back side opening in the stack. The method also includes selectively removing the second material layers through the back side opening to form back side recesses between adjacent first material layers, forming a metal charge storage layer in the back side opening and in the back side recesses and forming discrete charge storage regions in the back side recesses by removing the metal charge storage layer from the back side opening and selectively recessing the metal charge storage layer in the back side recesses.
公开/授权文献
- US09397107B2 Methods of making three dimensional NAND devices 公开/授权日：2016-07-19
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