Invention Application
- Patent Title: Semiconductor Constructions
- Patent Title (中): 半导体建筑
-
Application No.: US14321466Application Date: 2014-07-01
-
Publication No.: US20160005693A1Publication Date: 2016-01-07
- Inventor: Ashim Dutta , Mohd Kamran Akhtar , Shane J. Trapp
- Applicant: Micron Technology, Inc.
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/528

Abstract:
Some embodiments include a construction having conductive structures spaced from one another by intervening regions. Insulative structures are within the intervening regions. The insulative structures include dielectric spacers and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps. The dielectric capping material is between the dielectric spacers and not over upper surfaces of the dielectric spacers. Some embodiments include a construction having a first conductive structure with an upper surface, and having a plurality of second conductive structures electrically coupled with the upper surface of the first conductive structure and spaced from one another by intervening regions. Air gap/spacer insulative structures are within the intervening regions. The air gap/spacer insulative structures have dielectric spacers along sidewalls of the second conductive structures and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps.
Public/Granted literature
- US09679852B2 Semiconductor constructions Public/Granted day:2017-06-13
Information query
IPC分类: