公开(公告)号：US20160005693A1

公开(公告)日：2016-01-07

申请号：US14321466

申请日：2014-07-01

Applicant: Micron Technology, Inc.

Inventor： Ashim Dutta ,  Mohd Kamran Akhtar ,  Shane J. Trapp

IPC: H01L23/532 ,  H01L23/528

CPC classification number: H01L23/53295 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/4821 ,  H01L23/5222 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include a construction having conductive structures spaced from one another by intervening regions. Insulative structures are within the intervening regions. The insulative structures include dielectric spacers and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps. The dielectric capping material is between the dielectric spacers and not over upper surfaces of the dielectric spacers. Some embodiments include a construction having a first conductive structure with an upper surface, and having a plurality of second conductive structures electrically coupled with the upper surface of the first conductive structure and spaced from one another by intervening regions. Air gap/spacer insulative structures are within the intervening regions. The air gap/spacer insulative structures have dielectric spacers along sidewalls of the second conductive structures and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps.

Abstract translation: 一些实施例包括具有通过中间区域彼此间隔开的导电结构的结构。 绝缘结构位于中间区域内。 绝缘结构包括介电间隔物和介电间隔物之间​​的气隙。 介质封盖材料位于气隙之上。 电介质封盖材料介于介电间隔物之间​​，而不在电介质间隔物的上表面之上。 一些实施例包括具有带有上表面的第一导电结构的结构，并且具有与第一导电结构的上表面电耦合并且通过中间区域彼此间隔开的多个第二导电结构。 气隙/间隔绝缘结构位于中间区域内。 气隙/间隔绝缘结构在第二导电结构的侧壁和介电间隔物之间​​的空气间隙具有介电间隔物。 介质封盖材料位于气隙之上。

公开(公告)号：US20170263563A1

公开(公告)日：2017-09-14

申请号：US15601919

申请日：2017-05-22

Applicant: Micron Technology, Inc.

Inventor： Ashim Dutta ,  Mohd Kamran Akhtar ,  Shane J. Trapp

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/53295 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/4821 ,  H01L23/5222 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include a construction having conductive structures spaced from one another by intervening regions. Insulative structures are within the intervening regions. The insulative structures include dielectric spacers and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps. The dielectric capping material is between the dielectric spacers and not over upper surfaces of the dielectric spacers. Some embodiments include a construction having a first conductive structure with an upper surface, and having a plurality of second conductive structures electrically coupled with the upper surface of the first conductive structure and spaced from one another by intervening regions. Air gap/spacer insulative structures are within the intervening regions. The air gap/spacer insulative structures have dielectric spacers along sidewalls of the second conductive structures and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps.

公开(公告)号：US09984977B2

公开(公告)日：2018-05-29

申请号：US15601919

申请日：2017-05-22

Applicant: Micron Technology, Inc.

Inventor： Ashim Dutta ,  Mohd Kamran Akhtar ,  Shane J. Trapp

IPC: H01L23/482 ,  H01L23/532 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L23/53295 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/4821 ,  H01L23/5222 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include a construction having conductive structures spaced from one another by intervening regions. Insulative structures are within the intervening regions. The insulative structures include dielectric spacers and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps. The dielectric capping material is between the dielectric spacers and not over upper surfaces of the dielectric spacers. Some embodiments include a construction having a first conductive structure with an upper surface, and having a plurality of second conductive structures electrically coupled with the upper surface of the first conductive structure and spaced from one another by intervening regions. Air gap/spacer insulative structures are within the intervening regions. The air gap/spacer insulative structures have dielectric spacers along sidewalls of the second conductive structures and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps.

公开(公告)号：US09679852B2

公开(公告)日：2017-06-13

申请号：US14321466

申请日：2014-07-01

Applicant: Micron Technology, Inc.

Inventor： Ashim Dutta ,  Mohd Kamran Akhtar ,  Shane J. Trapp

IPC: H01L23/482 ,  H01L23/532 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L23/53295 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/4821 ,  H01L23/5222 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include a construction having conductive structures spaced from one another by intervening regions. Insulative structures are within the intervening regions. The insulative structures include dielectric spacers and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps. The dielectric capping material is between the dielectric spacers and not over upper surfaces of the dielectric spacers. Some embodiments include a construction having a first conductive structure with an upper surface, and having a plurality of second conductive structures electrically coupled with the upper surface of the first conductive structure and spaced from one another by intervening regions. Air gap/spacer insulative structures are within the intervening regions. The air gap/spacer insulative structures have dielectric spacers along sidewalls of the second conductive structures and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps.