发明申请
US20160005760A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
审中-公开
半导体器件及制造半导体器件的方法
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件及制造半导体器件的方法
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申请号: US14725476申请日: 2015-05-29
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公开(公告)号: US20160005760A1公开(公告)日: 2016-01-07
- 发明人: Dohyun Lee , Jaegoo Lee , Young-Jin Kwon , Youngwoo Park , Jaeduk Lee
- 申请人: Dohyun Lee , Jaegoo Lee , Young-Jin Kwon , Youngwoo Park , Jaeduk Lee
- 优先权: KR10-2014-0081956 20140701
- 主分类号: H01L27/115
- IPC分类号: H01L27/115 ; H01L29/10 ; H01L29/792
摘要:
A semiconductor device includes a lower stack structure including lower gate electrodes and lower insulating layers that are alternately and repeatedly stacked on a substrate. The semiconductor device includes an upper stack structure including upper gate electrodes and upper insulating layers that are alternately and repeatedly stacked on the lower stack structure. A lower channel structure penetrates the lower stack structure. An upper channel structure penetrates and is connected to the upper stack structure. A lower vertical insulator is disposed between the lower stack structure and the lower channel structure. The lower channel structure includes a first vertical semiconductor pattern connected to the substrate, and a first connecting semiconductor pattern disposed on the first vertical semiconductor pattern. The upper channel structure includes a second vertical semiconductor pattern electrically connected to the first vertical semiconductor pattern with the first connecting semiconductor pattern disposed therebetween.