发明申请
- 专利标题： POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 功率半导体器件及其制造方法
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申请号： US14495887申请日： 2014-09-25
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公开(公告)号： US20160005842A1公开(公告)日： 2016-01-07
- 发明人: Jae Hoon PARK , Chang Su JANG , Kyu Hyun MO , In Hyuk SONG
- 申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 申请人地址： KR Suwon-Si
- 专利权人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人地址： KR Suwon-Si
- 优先权： KR10-2014-0081591 20140701
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L29/66
摘要：
A power semiconductor device may include a drift region including a base layer and a surface semiconductor layer disposed on the base layer and having a first conductivity type; a field insulating layer disposed on the base layer, embedded in the surface semiconductor layer, and including an opening portion; and a collector region disposed below the base layer and having a second conductivity type. The field insulating layer is formed in the drift region to limit movement of holes, whereby conduction loss of the power semiconductor device may be significantly decreased.
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