Invention Application
- Patent Title: THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
- Patent Title (中): 薄膜晶体管及其制造方法，阵列基板及其制造方法及显示装置
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Application No.: US14429279Application Date: 2014-07-31
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Publication No.: US20160013060A1Publication Date: 2016-01-14
- Inventor: Xiangyong KONG , Hongda SUN
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Priority: CN201410039812.7 20140127
- International Application: PCT/CN2014/083429 WO 20140731
- Main IPC: H01L21/283
- IPC: H01L21/283 ; H01L29/66 ; H01L21/311 ; H01L29/45 ; H01L27/32 ; H01L29/51 ; H01L29/423 ; H01L29/417 ; H01L27/12 ; H01L29/786 ; H01L29/49
Abstract:
A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The array substrate comprises: a base substrate and an electrode arranged on the base substrate. The electrode comprises: an aluminum layer or an aluminum alloy layer on the base substrate; and a first barrier layer arranged on the aluminum layer or the aluminum alloy layer and configured for preventing the aluminum layer or the aluminum alloy layer from producing hillocks. The array substrate can eliminate bad phenomenon that the metal aluminum or aluminum alloy formed on the base substrate produces hillocks when subjected to high temperature.
Public/Granted literature
Information query
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