Invention Application
US20160016788A1 SOI SUBSTRATE, PHYSICAL QUANTITY SENSOR, SOI SUBSTRATE MANUFACTURING METHOD, AND PHYSICAL QUANTITY SENSOR MANUFACTURING METHOD
有权
SOI衬底，物理量传感器，SOI衬底制造方法和物理量传感器制造方法
- Patent Title: SOI SUBSTRATE, PHYSICAL QUANTITY SENSOR, SOI SUBSTRATE MANUFACTURING METHOD, AND PHYSICAL QUANTITY SENSOR MANUFACTURING METHOD
- Patent Title (中): SOI衬底，物理量传感器，SOI衬底制造方法和物理量传感器制造方法
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Application No.: US14774194Application Date: 2014-04-24
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Publication No.: US20160016788A1Publication Date: 2016-01-21
- Inventor: Tetsuo YOSHIOKA , Shinya ASAI , Jyunya NISHIDA
- Applicant: DENSO CORPORATION
- Priority: JP2013-099583 20130509; JP2014-065941 20140327
- International Application: PCT/JP2014/002298 WO 20140424
- Main IPC: B81B3/00
- IPC: B81B3/00 ; G01L9/12 ; B81C3/00 ; G01P15/125
Abstract:
A capacitance type physical quantity sensor includes: a first substrate; and a second substrate bonded to the first substrate through an insulating film. The second substrate includes first and second groove portions at a place of the second substrate facing an end portion of the first and second support units formed on the first substrate on a side opposite to the movable unit. A part of the end portion of the first support unit protrudes over the first groove portion. A part of the end portion of the second support unit protrudes over the second groove portion.
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