公开(公告)号：US20200058510A1

公开(公告)日：2020-02-20

申请号：US16662329

申请日：2019-10-24

Applicant: DENSO CORPORATION

Inventor： Shuntaro YAMADA ,  Akinori KANDA ,  Tetsuo YOSHIOKA ,  Takashige NAGAO ,  Kouichi MIYASHITA

IPC: H01L21/304 ,  H01L21/683 ,  H01L23/00 ,  H01L21/78

Abstract: In a manufacturing method of a semiconductor device including a substrate having a front surface and a rear surface, and a film attached to the rear surface, the film is attached on the rear surface, a rear surface side groove is provided by half-cutting the substrate from the rear surface together with the film, a protective member is attached to the film after the rear surface side groove is provided, and a front surface side groove connected to the rear surface side groove is provided by dicing the substrate from the front surface after the protective member is attached.

公开(公告)号：US20160016788A1

公开(公告)日：2016-01-21

申请号：US14774194

申请日：2014-04-24

Applicant: DENSO CORPORATION

Inventor： Tetsuo YOSHIOKA ,  Shinya ASAI ,  Jyunya NISHIDA

IPC: B81B3/00 ,  G01L9/12 ,  B81C3/00 ,  G01P15/125

CPC classification number: B81B3/0086 ,  B81B3/0021 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81B2203/0136 ,  B81C3/001 ,  B81C2201/019 ,  G01L9/0073 ,  G01L9/12 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  H01L29/84

Abstract: A capacitance type physical quantity sensor includes: a first substrate; and a second substrate bonded to the first substrate through an insulating film. The second substrate includes first and second groove portions at a place of the second substrate facing an end portion of the first and second support units formed on the first substrate on a side opposite to the movable unit. A part of the end portion of the first support unit protrudes over the first groove portion. A part of the end portion of the second support unit protrudes over the second groove portion.

Abstract translation: 电容型物理量传感器包括：第一基板; 以及通过绝缘膜与第一基板接合的第二基板。 第二基板包括在第二基板的与可移动单元相对的一侧上形成在第一基板上的第一和第二支撑单元的端部的位置处的第一和第二槽部。 第一支撑单元的端部的一部分在第一槽部上突出。 第二支撑单元的端部的一部分在第二槽部分上突出。

公开(公告)号：US20190023563A1

公开(公告)日：2019-01-24

申请号：US15757672

申请日：2016-09-09

Applicant: DENSO CORPORATION

Inventor： Akira OGAWA ,  Yoshitaka NODA ,  Tetsuo YOSHIOKA ,  Yuhei SHIMIZU

IPC: B81C1/00

CPC classification number: B81C1/00579 ,  B81B2201/033 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0139 ,  B81C2201/0142 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0882

Abstract: A semiconductor device production method includes performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed. In the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer, and the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential or a same temperature during the trench etching.