Invention Application
- Patent Title: METHOD OF FORMING SPACERS FOR A GATE OF A TRANSISTOR
- Patent Title (中): 形成晶体管栅极的方法
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Application No.: US14797345Application Date: 2015-07-13
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Publication No.: US20160020152A1Publication Date: 2016-01-21
- Inventor: Nicolas POSSEME
- Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Priority: FR1456929 20140718
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L29/51 ; H01L21/265 ; H01L29/16 ; H01L29/66 ; H01L21/31 ; H01L21/311
Abstract:
A method for forming spacers of a field effect transistor gate, comprising forming a nitride layer covering the gate, modifying the nitride layer by contacting the nitride layer with plasma comprising ions heavier than hydrogen and CxHy so as to form a nitride-based modified layer and a carbon film; with the modifying being so executed that plasma creates an anisotropic bombardment with hydrogen (H)-based ions from CxHy in a favorite direction parallel to flanks of the gate and so as to modify an upper portion of the thickness of the nitride-based layer at the level of the flanks of the gate only, with the anisotropic bombardment with ions heavier than hydrogen enabling the carbon in CxHy to form a carbon film, and removing the nitride-based modified layer, using etching of the nitride-based modified layer to said carbon film and to the non-modified portions which the spacers are made of.
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