A reverse-conducting IGBT includes a semiconductor body having a drift region arranged between first and second surfaces. The semiconductor body further includes first collector regions arranged at the second surface and in Ohmic contact with a second electrode, backside emitter regions and in Ohmic contact with the second electrode. In a horizontal direction substantially parallel to the first surface, the first collector regions and backside emitter regions define an rc-IGBT area. The semiconductor body further includes a second collector region of the second conductivity type arranged at the second surface and in Ohmic contact with the second electrode. The second collector region defines in the horizontal direction a pilot-IGBT area. The rc-IGBT area includes first semiconductor regions in Ohmic contact with the first electrode and arranged between the drift region and first electrode. The pilot-IGBT area includes second semiconductor regions of the same conductivity type as the first semiconductor regions.