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公开(公告)号：US20220392892A1
公开(公告)日：2022-12-08
申请号：US17831597
申请日：2022-06-03
发明人： Frank Dieter Pfirsch
IPC分类号： H01L27/06 , H01L29/861 , H01L29/739 , H01L29/66
摘要： An RC IGBT includes: an active region with separate IGBT and diode sections; a semiconductor body forming a part of the active region; a first load terminal and control terminal at a first side of the body and a second load terminal at a second side, the control terminal including a control terminal finger that laterally overlaps, in the active region, with the diode section. Control trenches extending into the semiconductor body along a vertical direction have a control trench electrode electrically connected to the control terminal for controlling a load current between the load terminals in the IGBT section. At least one control trench extends into both IGBT and diode sections. The electrical connection between the control trench electrode of that control trench and the control terminal is established at least based on an electrically conductive member arranged, in the diode section, in contact with the control terminal finger.
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公开(公告)号：US20210313460A1
公开(公告)日：2021-10-07
申请号：US17350505
申请日：2021-06-17
发明人： Matteo Dainese , Alexander Philippou , Markus Beninger-Bina , Ingo Dirnstorfer , Erich Griebl , Christian Jaeger , Johannes Georg Laven , Caspar Leendertz , Frank Dieter Pfirsch
IPC分类号： H01L29/739 , H01L29/06 , H01L29/10 , H01L29/40 , H01L29/66 , H01L29/423
摘要： A power semiconductor switch includes an active cell region with a drift region, an edge termination region, and IGBT cells within the active cell region. Each IGBT cell includes trenches that extend into the drift region and laterally confine mesas. At least one control trench has a control electrode for controlling the load current. At least one dummy trench has a dummy electrode electrically coupled to the control electrode. At least one further trench has a further trench electrode. At least one active mesa is electrically connected to a first load terminal within the active cell region. Each control trench is arranged adjacent to no more than one active mesa. At least one inactive mesa is adjacent to the dummy trench. A cross-trench structure merges each control trench, dummy trench and further trench to each other. The cross-trench structure overlaps at least partially along a vertical direction with the trenches.
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公开(公告)号：US20190109188A1
公开(公告)日：2019-04-11
申请号：US16196373
申请日：2018-11-20
IPC分类号： H01L29/06 , H03K17/567 , H01L29/10 , H01L29/739 , H01L29/08 , H01L29/40 , H01L29/78
CPC分类号： H01L29/063 , H01L29/0634 , H01L29/0696 , H01L29/0834 , H01L29/1095 , H01L29/407 , H01L29/7394 , H01L29/7397 , H01L29/7803 , H01L29/7804 , H01L29/7813 , H01L29/7828 , H03K17/567
摘要： A power semiconductor device is disclosed. The device includes a semiconductor body coupled to a first load terminal structure and a second load terminal structure, a first cell and a second cell. A first mesa is included in the first cell, the first mesa including: a first port region and a first channel region. A second mesa included in the second cell, the second mesa including a second port region. A third cell is electrically connected to the second load terminal structure and electrically connected to a drift region. The third cell includes a third mesa comprising: a third port region, a third channel region, and a third control electrode.
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公开(公告)号：US09859272B2
公开(公告)日：2018-01-02
申请号：US15210449
申请日：2016-07-14
发明人： Hans-Joachim Schulze , Holger Huesken , Franz-Josef Niedernostheide , Frank Dieter Pfirsch , Roman Roth , Christian Philipp Sandow , Carsten Schaeffer , Stephan Voss
IPC分类号： H01L29/66 , H01L27/06 , H01L29/739 , H01L29/10 , H01L29/45 , H01L29/47 , H01L29/06 , H01L29/08 , H01L29/165
CPC分类号： H01L27/0664 , H01L29/0619 , H01L29/0834 , H01L29/1095 , H01L29/165 , H01L29/205 , H01L29/45 , H01L29/47 , H01L29/7397 , H01L29/8611 , H01L29/8613 , H01L29/868 , H01L29/872
摘要： A semiconductor device comprising a source region being electrically connected to a first load terminal (E) of the semiconductor device and a drift region comprising a first semiconductor material (M1) having a first band gap, the drift region having dopants of a first conductivity type and being configured to carry at least a part of a load current between the first load terminal (E) and a second load terminal (C) of the semiconductor device, is presented. The semiconductor device further comprises a semiconductor body region having dopants of a second conductivity type complementary to the first conductivity type and being electrically connected to the first load terminal (E), a transition between the semiconductor body region and the drift region forming a pn-junction, wherein the pn-junction is configured to block a voltage applied between the first load terminal (E) and the second load terminal (C). The semiconductor body region isolates the source region from the drift region and includes a reduced band gap zone comprising a second semiconductor material (M2) having a second band gap that is smaller than the first band gap, wherein the reduced band gap zone is arranged in the semiconductor body region such that the reduced band gap zone and the source region exhibit, in a cross-section along a vertical direction (Z), at least one of a common lateral extension range (LR) along a first lateral direction (X) and a common vertical extension range (VR) along the vertical direction (Z).
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公开(公告)号：US09490354B2
公开(公告)日：2016-11-08
申请号：US14260490
申请日：2014-04-24
IPC分类号： H01L29/739 , H01L29/36 , H01L29/78 , H01L21/265 , H01L21/22 , H01L29/06 , H01L29/08 , H01L29/423 , H01L29/66 , H01L29/10 , H01L29/167 , H01L21/331
CPC分类号： H01L29/7397 , H01L21/22 , H01L21/26513 , H01L29/0623 , H01L29/0834 , H01L29/1095 , H01L29/167 , H01L29/36 , H01L29/4236 , H01L29/66348
摘要： A semiconductor body of an IGBT includes: a first base region of a second conductivity type; a source region of a first conductivity type different from the second conductivity type and forming a first pn-junction with the first base region; a drift region of the first conductivity type and forming a second pn-junction with the first base region; a collector region of the second conductivity type; at least one trench filled with a gate electrode and having a first trench portion of a first width and a second trench portion of a second width, the second width being different from the first width; and a field stop region having the first conductivity type and located between the drift region and the collector region. The field stop region includes a plurality of buried regions having the second conductivity type.
摘要翻译： IGBT的半导体主体包括：第二导电类型的第一基极区域; 与第二导电类型不同的第一导电类型的源极区域，并与第一基极区域形成第一pn结; 第一导电类型的漂移区，并与第一基区形成第二pn结; 第二导电类型的集电极区域; 至少一个沟槽，其填充有栅电极并且具有第一宽度的第一沟槽部分和第二宽度的第二沟槽部分，所述第二宽度不同于所述第一宽度; 以及具有第一导电类型并位于漂移区域和集电极区域之间的场阻挡区域。 场停止区域包括具有第二导电类型的多个掩埋区域。
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公开(公告)号：US20160099188A1
公开(公告)日：2016-04-07
申请号：US14861569
申请日：2015-09-22
IPC分类号： H01L21/66 , H01L29/423 , H01L29/78 , H01L29/06
CPC分类号： H01L22/32 , H01L29/0653 , H01L29/407 , H01L29/4236 , H01L29/7395 , H01L29/7813 , H01L29/7815 , H01L29/7827
摘要： A semiconductor device includes semiconductor body region and a surface region, the semiconductor body region including a first conductivity type first semiconductor region type and a second conductivity type second semiconductor region. The semiconductor device further includes: a first load contact structure included in the surface region and arranged for feeding a load current into the semiconductor body region; a first trench extending into the semiconductor body region and having a sensor electrode and a first dielectric, the first dielectric electrically insulating the sensor electrode from the second semiconductor region; an electrically conductive path electrically connecting the sensor electrode to the first semiconductor region; a first semiconductor path, wherein the first semiconductor region is electrically coupled to the first load contact structure by at least the first semiconductor path; a sensor contact structure included in the surface region and arranged for receiving an electrical potential of the sensor electrode.
摘要翻译： 半导体器件包括半导体本体区域和表面区域，该半导体本体区域包括第一导电型第一半导体区域型和第二导电型第二半导体区域。 所述半导体器件还包括：第一负载接触结构，包括在所述表面区域中并被布置成用于将负载电流馈送到所述半导体本体区域中; 延伸到半导体主体区域并具有传感器电极和第一电介质的第一沟槽，所述第一电介质将所述传感器电极与所述第二半导体区域电绝缘; 将传感器电极电连接到第一半导体区域的导电路径; 第一半导体路径，其中所述第一半导体区域通过至少所述第一半导体路径电耦合到所述第一负载接触结构; 传感器接触结构，包括在所述表面区域中并被布置成用于接收所述传感器电极的电位。
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公开(公告)号：US20230010004A1
公开(公告)日：2023-01-12
申请号：US17859453
申请日：2022-07-07
IPC分类号： H01L29/40
摘要： A power semiconductor device includes an active region and an edge termination region surrounding the active region. A field plate structure arranged around the active region includes at least one electrically conductive track electrically connected to a first potential of a first load terminal at a first joint and, at a second joint, electrically connected to a second potential of a second load terminal. The track forms at least n crossings, wherein n is greater 5, with a straight virtual line that extends from the active region towards an edge of the edge termination region. The difference in potential between adjacent two crossings increases in at least 50% of the length of the virtual line, and/or the difference in potential within, with respect to the active region, the first 20% of the length of virtual line is less than 10% of the total difference in potential along the virtual line.
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公开(公告)号：US20210202304A1
公开(公告)日：2021-07-01
申请号：US17184725
申请日：2021-02-25
IPC分类号： H01L21/768 , H01L23/532
摘要： An embodiment relates to a method for manufacturing a semiconductor device. The method includes providing a semiconductor body including a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type interposed between the first semiconductor region and a first surface of the semiconductor body. The method further includes forming a first contact layer over the first surface of the semiconductor body. The first contact layer forms a direct electrical contact to the second semiconductor region. The method further includes forming a contact trench extending into the semiconductor body by removing at least a portion of the second semiconductor region. The method further includes forming a second contact layer in the contact trench. The second contact layer is directly electrically connected to the semiconductor body at a bottom side of the contact trench.
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公开(公告)号：US20210083081A1
公开(公告)日：2021-03-18
申请号：US17016498
申请日：2020-09-10
发明人： Johannes Georg Laven , Roman Baburske , Frank Dieter Pfirsch , Alexander Philippou , Christian Philipp Sandow
IPC分类号： H01L29/739 , H01L29/08 , H01L29/10 , H01L29/66
摘要： An RC IGBT with an n-barrier region in a transition section between a diode section and an IGBT section is presented.
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公开(公告)号：US10950494B2
公开(公告)日：2021-03-16
申请号：US16251729
申请日：2019-01-18
IPC分类号： H01L21/768 , H01L23/532
摘要： An embodiment relates to a method for manufacturing a semiconductor device. The method includes providing a semiconductor body including a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type interposed between the first semiconductor region and a first surface of the semiconductor body. The method further includes forming a first contact layer over the first surface of the semiconductor body. The first contact layer forms a direct electrical contact to the second semiconductor region. The method further includes forming a contact trench extending into the semiconductor body by removing at least a portion of the second semiconductor region. The method further includes forming a second contact layer in the contact trench. The second contact layer is directly electrically connected to the semiconductor body at a bottom side of the contact trench.
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