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    Semiconductor device and RC-IGBT with zones directly adjoining a rear side electrode
    2.
    发明授权
    Semiconductor device and RC-IGBT with zones directly adjoining a rear side electrode 有权
    半导体器件和RC-IGBT，其区域直接邻近后侧电极

    公开(公告)号：US09159819B2

    公开(公告)日：2015-10-13

    申请号：US14185117

    申请日：2014-02-20

    申请人： Infineon Technologies AG

    发明人： Frank Pfirsch ,  Dorothea Werber

    IPC分类号： H01L29/06 ,  H01L29/739 ,  H01L29/40 ,  H01L29/66 ,  H01L21/266

    CPC分类号： H01L29/7397 ,  H01L21/266 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/407 ,  H01L29/66348

    摘要： A semiconductor device includes a drift zone of a first conductivity type in a semiconductor body. Controllable cells are configured to form a conductive channel connected with the drift zone in a first state. First zones of the first conductivity type as well as second zones and a third zone of a complementary second conductivity type are between the drift zone and a rear side electrode, respectively. The first, second and third zones directly adjoin the rear side electrode. The third zone is larger and has a lower mean emitter efficiency than the second zones.

    摘要翻译： 半导体器件包括半导体本体中的第一导电类型的漂移区。 可控电池被配置为在第一状态下形成与漂移区连接的导电通道。 第一导电类型的第一区以及第二区和互补第二导电类型的第三区分别位于漂移区和后侧电极之间。 第一，第二和第三区域直接毗邻后侧电极。 第三区域比第二区域更大，平均发射极效率较低。

    Reverse-Conducting IGBT
    4.
    发明申请
    Reverse-Conducting IGBT 有权
    反向导通IGBT

    公开(公告)号：US20160035867A1

    公开(公告)日：2016-02-04

    申请号：US14810040

    申请日：2015-07-27

    申请人： Infineon Technologies AG

    发明人： Frank Dieter Pfirsch ,  Dorothea Werber

    IPC分类号： H01L29/739 ,  H01L29/66 ,  H01L27/06

    CPC分类号： H01L29/7395 ,  H01L27/0664 ,  H01L27/0727 ,  H01L27/0761 ,  H01L29/0619 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7397

    摘要： A reverse-conducting IGBT includes a semiconductor body having a drift region arranged between first and second surfaces. The semiconductor body further includes first collector regions arranged at the second surface and in Ohmic contact with a second electrode, backside emitter regions and in Ohmic contact with the second electrode. In a horizontal direction substantially parallel to the first surface, the first collector regions and backside emitter regions define an rc-IGBT area. The semiconductor body further includes a second collector region of the second conductivity type arranged at the second surface and in Ohmic contact with the second electrode. The second collector region defines in the horizontal direction a pilot-IGBT area. The rc-IGBT area includes first semiconductor regions in Ohmic contact with the first electrode and arranged between the drift region and first electrode. The pilot-IGBT area includes second semiconductor regions of the same conductivity type as the first semiconductor regions.

    摘要翻译： 反向导通IGBT包括具有布置在第一表面和第二表面之间的漂移区域的半导体本体。 半导体本体还包括布置在第二表面处并与第二电极欧姆接触的第一集电极区域，背面发射极区域和与第二电极欧姆接触。 在基本上平行于第一表面的水平方向上，第一集电极区域和背面侧发射极区域限定了rc-IGBT区域。 半导体主体还包括布置在第二表面处并与第二电极欧姆接触的第二导电类型的第二集电极区域。 第二集电极区域在水平方向上限定引导IGBT区域。 rc-IGBT区域包括与第一电极欧姆接触并且布置在漂移区域和第一电极之间的第一半导体区域。 导通IGBT区域包括与第一半导体区域相同的导电类型的第二半导体区域。

    Semiconductor Device
    5.
    发明申请
    Semiconductor Device 有权
    半导体器件

    公开(公告)号：US20150179636A1

    公开(公告)日：2015-06-25

    申请号：US14133912

    申请日：2013-12-19

    申请人： Infineon Technologies AG

    发明人： Frank Dieter Pfirsch ,  Dorothea Werber

    IPC分类号： H01L27/06 ,  H01L29/06 ,  H01L29/423 ,  H01L29/739 ,  H01L29/10

    CPC分类号： H01L29/1095 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/861 ,  H01L29/8611 ,  H01L29/8613

    摘要： A semiconductor device includes at least one field effect transistor structure, which is formed on a semiconductor substrate. The field effect transistor structure includes a drift region, a body region, a source region and a gate. The source region and the drift region include at least mainly a first conductivity type, wherein the body region includes at least mainly a second conductivity type. The body region includes at least one low doping dose portion extending from the drift region to at least one of the source region or an electrical contact interface of the body region at a main surface of the semiconductor substrate, wherein a doping dose within the low doping dose portion of the body region is less than 3 times a breakdown charge.

    摘要翻译： 半导体器件包括形成在半导体衬底上的至少一个场效应晶体管结构。 场效应晶体管结构包括漂移区，体区，源极区和栅极。 源极区域和漂移区域至少主要包括第一导电类型，其中主体区域至少主要包括第二导电类型。 体区域包括从半导体衬底的主表面处的漂移区域延伸到源区域或主体区域的电接触界面中的至少一个的至少一个低掺杂剂量部分，其中低掺杂中的掺杂剂量 身体区域的剂量部分小于击穿电荷的3倍。

    Electronic Circuit with a Reverse-Conducting IGBT and Gate Driver Circuit
    6.
    发明申请
    Electronic Circuit with a Reverse-Conducting IGBT and Gate Driver Circuit 有权
    具有反向导通IGBT和栅极驱动器电路的电子电路

    公开(公告)号：US20150015309A1

    公开(公告)日：2015-01-15

    申请号：US13941797

    申请日：2013-07-15

    申请人： Infineon Technologies AG

    发明人： Dorothea Werber

    IPC分类号： H03K17/567

    CPC分类号： H03K17/567 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/7397

    摘要： An electronic circuit includes a reverse-conducting IGBT and a driver circuit. A first diode emitter efficiency of the reverse-conducting IGBT at a first off-state gate voltage differs from a second diode emitter efficiency at a second off-state gate voltage. A driver terminal of the driver circuit is electrically coupled to a gate terminal of the reverse-conducting IGBT. In a first state the driver circuit supplies an on-state gate voltage at the driver terminal. In a second state the driver circuit supplies the first off-state gate voltage, and in a third state the driver circuit supplies the second off-state gate voltage at the driver terminal. The reverse-conducting IGBT may be operated in different modes such that, for example, overall losses may be reduced.

    摘要翻译： 电子电路包括反向导通IGBT和驱动电路。 在第一截止状态栅极电压下的反向导通IGBT的第一二极管发射极效率与第二截止状态栅极电压处的第二二极管发射极效率不同。 驱动电路的驱动端子电耦合到反向导通IGBT的栅极端子。 在第一状态下，驱动器电路在驱动器端提供通态栅极电压。 在第二状态下，驱动电路提供第一截止状态栅极电压，在第三状态下，驱动电路在驱动器端提供第二截止状态栅极电压。 反向导通IGBT可以以不同的模式操作，使得例如可以减小总体损耗。

    Electronic circuit with a reverse-conducting IGBT and gate driver circuit
    8.
    发明授权
    Electronic circuit with a reverse-conducting IGBT and gate driver circuit 有权
    具有反向导通IGBT和栅极驱动电路的电子电路

    公开(公告)号：US09337827B2

    公开(公告)日：2016-05-10

    申请号：US13941797

    申请日：2013-07-15

    申请人： Infineon Technologies AG

    发明人： Dorothea Werber

    IPC分类号： H03K3/00 ,  H03K17/567 ,  H01L29/739 ,  H01L29/06 ,  H01L29/08

    CPC分类号： H03K17/567 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/7397

    摘要： An electronic circuit includes a reverse-conducting IGBT and a driver circuit. A first diode emitter efficiency of the reverse-conducting IGBT at a first off-state gate voltage differs from a second diode emitter efficiency at a second off-state gate voltage. A driver terminal of the driver circuit is electrically coupled to a gate terminal of the reverse-conducting IGBT. In a first state the driver circuit supplies an on-state gate voltage at the driver terminal. In a second state the driver circuit supplies the first off-state gate voltage, and in a third state the driver circuit supplies the second off-state gate voltage at the driver terminal. The reverse-conducting IGBT may be operated in different modes such that, for example, overall losses may be reduced.

    摘要翻译： 电子电路包括反向导通IGBT和驱动电路。 在第一截止状态栅极电压下的反向导通IGBT的第一二极管发射极效率与第二截止状态栅极电压处的第二二极管发射极效率不同。 驱动电路的驱动端子电耦合到反向导通IGBT的栅极端子。 在第一状态下，驱动器电路在驱动器端提供通态栅极电压。 在第二状态下，驱动电路提供第一截止状态栅极电压，在第三状态下，驱动电路在驱动器端提供第二截止状态栅极电压。 反向导通IGBT可以以不同的模式操作，使得例如可以减小总体损耗。