发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND HEAT-DISSIPATING MECHANISM
- 专利标题(中): 半导体器件和散热机制
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申请号: US14778684申请日: 2014-03-03
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公开(公告)号: US20160049350A1公开(公告)日: 2016-02-18
- 发明人: Kenji MATSUDA , Dai SHINOZAKI , Yuichi MAKITA , Hitoshi KUBO , Yusuke OHSHIMA , Hidekazu MATSUDA , Junichi TANIUCHI
- 申请人: TANAKA KIKINZOKU KOGYO K.K.
- 优先权: JP2013-063939 20130326
- 国际申请: PCT/JP2014/001441 WO 20140303
- 主分类号: H01L23/367
- IPC分类号: H01L23/367 ; H05K7/20
摘要:
A semiconductor device includes a semiconductor chip which can be a heat-generating semiconductor chip or a semiconductor relay substrate in which an integrated circuit or wiring is built in. A sintered-silver-coated film is adhered on a surface layer part of the semiconductor substrate, interposed by a silicon oxide film. A heat-dissipating fin (heat sink), which may be copper or aluminum, is bonded on the sintered-silver-coated film, interposed by an adhesive layer.
公开/授权文献
- US09607922B2 Semiconductor device and heat-dissipating mechanism 公开/授权日:2017-03-28
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