公开(公告)号：US20160049350A1

公开(公告)日：2016-02-18

申请号：US14778684

申请日：2014-03-03

申请人： TANAKA KIKINZOKU KOGYO K.K.

发明人： Kenji MATSUDA ,  Dai SHINOZAKI ,  Yuichi MAKITA ,  Hitoshi KUBO ,  Yusuke OHSHIMA ,  Hidekazu MATSUDA ,  Junichi TANIUCHI

IPC分类号： H01L23/367 ,  H05K7/20

CPC分类号： H01L23/367 ,  H01L23/34 ,  H01L23/36 ,  H01L23/373 ,  H01L23/3736 ,  H01L24/01 ,  H01L2924/0002 ,  H05K7/20409 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor chip which can be a heat-generating semiconductor chip or a semiconductor relay substrate in which an integrated circuit or wiring is built in. A sintered-silver-coated film is adhered on a surface layer part of the semiconductor substrate, interposed by a silicon oxide film. A heat-dissipating fin (heat sink), which may be copper or aluminum, is bonded on the sintered-silver-coated film, interposed by an adhesive layer.

摘要翻译： 半导体器件包括可以是其中内置集成电路或布线的发热半导体芯片或半导体继电器基板的半导体芯片。烧结银涂覆膜粘附在半导体衬底的表层部分上 ，由氧化硅膜插入。 可以由铜或铝构成的散热片（散热片）通过粘合剂层粘合在烧结银涂覆膜上。