-
公开(公告)号:US20160121404A1
公开(公告)日:2016-05-05
申请号:US14891725
申请日:2014-05-20
发明人: Yuichi MAKITA , Yuusuke OHSHIMA , Hidekazu MATSUDA , Noriaki NAKAMURA , Junichi TANIUCHI , Hitoshi KUBO
CPC分类号: B22F9/30 , B22F1/0018 , B22F2301/255 , B22F2304/054 , B22F2304/056 , B22F2999/00
摘要: The present invention provides a method for producing silver particles, the method capable of adjusting the particle diameter to be within the range of several tens of nanometers to several hundreds of nanometers and also producing silver particles with a uniform particle diameter. The present invention relates to a method for producing silver particles by heating of a reaction system containing a thermally-decomposable silver-amine complex precursor, including a process of producing a silver-amine complex, a process of adding an organic compound having an amide (carboxylic amide) as a skeleton to a reaction system, and a process of heating the reaction system, in which a water content in the reaction system before the heating is 20 to 100 parts by weight relative to 100 parts by weight of the silver compound. The present invention can produce uniform silver particles while the particle diameter is controlled.
摘要翻译: 本发明提供一种银颗粒的制造方法,该方法能够将粒径调整在数十纳米至数百纳米的范围内,并且还可以制造具有均匀粒径的银粒子。 本发明涉及通过加热含有热分解性银 - 胺络合物前体的反应体系来制造银颗粒的方法,包括制备银 - 胺络合物的方法,加入具有酰胺的有机化合物的方法( 羧酸酰胺)作为反应体系的骨架,以及加热反应体系的方法,其中相对于100重量份的银化合物,加热前的反应体系中的水含量为20〜100重量份。 本发明可以在控制粒径的同时产生均匀的银颗粒。
-
公开(公告)号:US20190352321A1
公开(公告)日:2019-11-21
申请号:US16097758
申请日:2017-06-16
IPC分类号: C07F15/00
摘要: The present invention provides an iridium compound useful as a raw material compound for producing a cyclometalated iridium complex, the iridium compound being represented by the following General Formula (1). The iridium compound of the present invention is particularly useful as a raw material for imidazole-based cyclometalated iridium complexes among cyclometalated iridium complexes. (In General Formula (1), Ir represents an iridium atom, O represents an oxygen atom, X represents a halogen atom, and Y represents a counter cation; and R1 and R2 each independently represent an alkyl group with a carbon number of 1 or more and 10 or less, with the proviso that only one of R1 and R2 is a branched alkyl group.)
-
3.
公开(公告)号:US20170213624A1
公开(公告)日:2017-07-27
申请号:US15324353
申请日:2015-07-08
发明人: Shin-ichi OHKOSHI , Asuka NAMAI , Marie YOSHIKIYO , Kenji TANAKA , Tomomichi NASU , Yasuto MIYAMOTO , Takuma TAKEDA , Kenta MATSUMOTO , Yasushi MASAHIRO , Junichi TANIUCHI
IPC分类号: H01F1/03 , B22F1/00 , B22F9/30 , C22C5/04 , G11B5/65 , C22C38/00 , C22F1/14 , C22F1/10 , C21D9/00 , C21D6/00 , B22F1/02 , C22C19/07
CPC分类号: H01F1/0306 , B22F1/0018 , B22F1/02 , B22F9/26 , B22F9/30 , B22F2301/15 , B22F2301/25 , B22F2301/35 , B22F2302/45 , B22F2304/054 , B22F2998/10 , B22F2999/00 , B82Y25/00 , B82Y40/00 , C03C15/00 , C21D6/00 , C21D9/0068 , C22C5/04 , C22C19/07 , C22C38/00 , C22F1/10 , C22F1/14 , G11B5/653 , G11B5/656 , G11B5/712 , G11B5/714 , H01F1/0054 , H01F1/068 , B22F2201/013
摘要: The present invention relates to a magnetic material containing a magnetic alloy particle having an ordered crystal structure. The magnetic material according to the present invention is the one composed of a magnetic alloy particle having crystal magnetic anisotropy and being composed of an FePt alloy, a CoPt alloy, an FePd alloy, a Co3Pt alloy, an Fe3Pt alloy, a CoPt3 alloy, an FePt3 alloy, or the like, and a silica carrier covering the magnetic alloy, in which the silica carrier contains an alkali-earth metal compound such as an oxide, hydroxide or silicate compound of Ba, Ca, or Sr. The magnetic material according to the present invention is excellent in magnetic properties such as coercive force.
-
公开(公告)号:US20190211041A1
公开(公告)日:2019-07-11
申请号:US16301172
申请日:2017-06-16
CPC分类号: C07F15/0033 , C07F15/00 , C07F15/004 , C09K11/06 , C09K2211/1029 , C09K2211/1037 , C09K2211/1044 , C09K2211/185 , H01L51/0085 , H01L51/5016
摘要: Provided is a method for producing a halogen-crosslinked iridium dimer, including reacting an iridium compound represented by the general formula (1) with an aromatic bidentate ligand in a solvent to produce a halogen-crosslinked iridium dimer, the solvent having a boiling point of 50° C. or higher and lower than 350° C., the reaction being carried out at a reaction temperature of 50° C. or higher and lower than 300° C., and the aromatic bidentate ligand being added in an amount of 0.5 times or more and less than 10 times the molar amount of the iridium compound. The halogen-crosslinked iridium dimer is usable as a precursor of a cyclometalated iridium complex useful as a phosphorescent material.
-
5.
公开(公告)号:US20190144479A1
公开(公告)日:2019-05-16
申请号:US16098862
申请日:2017-06-16
摘要: A method for producing a cyclometalated iridium complex by allowing an iridium compound and an aromatic bidentate ligand to react each other. In particular, the method is characterized by allowing a β-diketonate salt represented by General Formula (4) to coexist in a reaction system for reaction. By adding the β-diketonate salt into the reaction system, stability of a reaction intermediate product between the iridium compound and the aromatic bidentate ligand improves. Therefore, yield of the cyclometalated iridium complex can improve. The cyclometalated iridium complex produced in accordance with the present invention is useful as a phosphorescent material for use in an organic EL element, for example.
-
公开(公告)号:US20180362565A1
公开(公告)日:2018-12-20
申请号:US16060105
申请日:2016-12-22
发明人: Hideo KONNO , Junichi TANIUCHI , Ryosuke HARADA , Toshiyuki SHIGETOMI , Rumi KOBAYASHI , Yasushi MASAHIRO
IPC分类号: C07F15/00
CPC分类号: C07F15/0033 , C09K11/06 , C09K2211/1029 , C09K2211/1044 , C09K2211/1059 , C09K2211/185 , H01L51/0085 , H01L51/5016
摘要: The present invention provides a method for producing a cyclometalated iridium complex by use of a non-chlorine iridium raw material. The method for producing a cyclometalated iridium complex includes producing a cyclometalated iridium complex by reacting a raw material including an iridium compound with an aromatic heterocyclic bidentate ligand capable of forming an iridium-carbon bond, the raw material being non-halogenated iridium having a conjugated base of a strong acid as a ligand. Here, the non-halogenated iridium is preferably one containing a conjugated base of a strong acid having a pKa of 3 or less as a ligand.
-
公开(公告)号:US20200181181A1
公开(公告)日:2020-06-11
申请号:US16344315
申请日:2017-12-04
IPC分类号: C07F15/00
摘要: The present invention provides a method for producing a cyclometalated iridium complex, the method including producing a cyclometalated iridium complex by reacting a cyclometalated iridium complex raw material including an organoiridium compound with an aromatic heterocyclic bidentate ligand capable of forming an iridium-carbon bond and an iridium-nitrogen bond, and using as the raw material an organoiridium compound including a substructure represented by the following General Formula (1). The present invention is capable of producing a cyclometalated iridium complex with a high yield without by-production of a halogen-crosslinked iridium dimer. (in General Formula (1), Ir represents an iridium atom, and O represents an oxygen atom).
-
公开(公告)号:US20170200907A1
公开(公告)日:2017-07-13
申请号:US15314648
申请日:2015-06-09
CPC分类号: H01L51/0085 , C07F15/0033 , C09K11/025 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1029 , C09K2211/1088 , C09K2211/1092 , C09K2211/185 , H01L51/5016
摘要: The present invention provides an organic metal complex having high heat resistance while making it possible to realize electroluminescence with high quantum efficiency as a light-emitting material for organic electroluminescent (EL) element. The present invention relates to an organic iridium complex for an organic EL element, wherein a C—N ligand including a substituent of a tricyclic-based structure obtained by condensing a heterocyclic ring and two benzene rings, and a β-diketone ligand composed of a propane-1,3-dione having two tert-butyl-substituted phenyl groups are coordinated with an iridium atom. The complex of the present invention has high heat resistance and contributes to lifetime prolongation of the organic EL element.
-
9.
公开(公告)号:US20170108212A1
公开(公告)日:2017-04-20
申请号:US15127259
申请日:2015-03-23
申请人: TANAKA KIKINZOKU KOGYO K.K. , NATIONAL INSTITUTES FOR QUANTUM AND RADIOLOGICAL SCIENCE AND TECHNOLOGY
发明人: Yuusuke OHSHIMA , Hitoshi KUBO , Hirosi NOGUCHI , Junichi TANIUCHI , Yasunori IWAI , Katsumi SATO
CPC分类号: F23C13/08 , B01D53/86 , B01J23/44 , B01J27/13 , B01J29/0354 , B01J35/1019 , B01J35/1038 , B01J35/1042 , B01J35/1061 , B01J35/1066 , B01J37/0203 , B01J37/0207 , B01J37/0209 , B01J37/0236 , B01J37/08 , B01J37/18 , G21C9/06 , Y02E30/40
摘要: The hydrogen combustion catalyst includes a catalyst metal supported on a carrier made of an inorganic oxide, wherein: a functional group having at least one alkyl group with three or less carbon atoms is bonded to a terminal of a hydroxyl group on the carrier surface by substitution; platinum and palladium are supported as the catalyst metal; and a chlorine content is 300 ppm to 2,000 ppm per 1 mass % of the total supported amount of a supported amount of platinum and a supported amount of palladium. The total supported amount of platinum and palladium is preferably 0.1 to 5.0 mass % based on mass of a whole catalyst. In the hydrogen combustion catalyst according to the present invention, when treating a gas that contains iodine and hydrogen, catalyst poisoning by iodine is suppressed.
-
公开(公告)号:US20160049350A1
公开(公告)日:2016-02-18
申请号:US14778684
申请日:2014-03-03
发明人: Kenji MATSUDA , Dai SHINOZAKI , Yuichi MAKITA , Hitoshi KUBO , Yusuke OHSHIMA , Hidekazu MATSUDA , Junichi TANIUCHI
IPC分类号: H01L23/367 , H05K7/20
CPC分类号: H01L23/367 , H01L23/34 , H01L23/36 , H01L23/373 , H01L23/3736 , H01L24/01 , H01L2924/0002 , H05K7/20409 , H01L2924/00
摘要: A semiconductor device includes a semiconductor chip which can be a heat-generating semiconductor chip or a semiconductor relay substrate in which an integrated circuit or wiring is built in. A sintered-silver-coated film is adhered on a surface layer part of the semiconductor substrate, interposed by a silicon oxide film. A heat-dissipating fin (heat sink), which may be copper or aluminum, is bonded on the sintered-silver-coated film, interposed by an adhesive layer.
摘要翻译: 半导体器件包括可以是其中内置集成电路或布线的发热半导体芯片或半导体继电器基板的半导体芯片。烧结银涂覆膜粘附在半导体衬底的表层部分上 ,由氧化硅膜插入。 可以由铜或铝构成的散热片(散热片)通过粘合剂层粘合在烧结银涂覆膜上。
-
-
-
-
-
-
-
-
-