Invention Application
- Patent Title: Single Junction Bi-Directional Electrostatic Discharge (ESD) Protection Circuit
- Patent Title (中): 单相双向静电放电（ESD）保护电路
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Application No.: US14684841Application Date: 2015-04-13
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Publication No.: US20160056147A1Publication Date: 2016-02-25
- Inventor: Junjun Li , Xin Yi Zhang , Xiaofeng Fan
- Applicant: Apple Inc.
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/78
Abstract:
In an embodiment, an ESD protection circuit may include a silicon-controlled rectifier (SCR) and a diode sharing a PN junction and forming a bi-directional ESD circuit. The single PN junction may reduce the capacitive load on the pin, which may allow the high speed circuit to meet its performance goals. In an embodiment, a floating P-well contact may be placed between two neighboring SCRs, to control triggering of the SCRs.
Public/Granted literature
- US09601480B2 Single junction bi-directional electrostatic discharge (ESD) protection circuit Public/Granted day:2017-03-21
Information query
IPC分类:
