公开(公告)号：US10079487B2

公开(公告)日：2018-09-18

申请号：US15175792

申请日：2016-06-07

Applicant: Apple Inc.

Inventor： Xiaofeng Fan ,  Xin Y. Zhang ,  Junjun Li

IPC: H02H3/22 ,  H02H9/04 ,  H02H1/00 ,  H05K1/02 ,  H01L27/02 ,  H02H3/20

CPC classification number: H02H9/046 ,  H01L27/0285 ,  H02H1/0007 ,  H02H3/20 ,  H02H9/041 ,  H05K1/0259

Abstract: An apparatus includes a device, a comparison circuit, and a switch. The device includes a first terminal coupled to a first power supply signal, and a second terminal coupled to a ground reference. The comparison circuit is configured to compare a first voltage level on the first power supply signal to a second voltage level of a second power supply signal, and enable the device in response to a determination that the first voltage level is greater than the second voltage level. The switch circuit is configured to couple a power supply terminal of the comparison circuit to the first power supply signal in response to determining that the first voltage level is greater than the second voltage level, and to couple the power supply terminal to the second power supply signal in response to determining that the first voltage level is less than the second voltage level.

公开(公告)号：US09653448B2

公开(公告)日：2017-05-16

申请号：US14533187

申请日：2014-11-05

Applicant: Apple Inc.

Inventor： Xin Yi Zhang ,  Xiaofeng Fan ,  Junjun Li

IPC: H01L27/02 ,  H01L29/78

CPC classification number: H01L27/0255 ,  H01L29/785

Abstract: In an embodiment, an ESD protection circuit is provided in which diodes may be formed between N+ and P+ diffusions within an insulated semiconductor region and in which additional diodes may be formed between adjacent insulated regions of opposite conduction type as well. The diodes may be used in parallel to form an ESD protection circuit, which may have low on resistance and may sink high ESD current per unit area. To support the formation of the ESD protection circuit, each silicon region may have alternating N+ and P+ diffusions, and adjacent silicon regions may have N+ and P+ diffusions alternating in opposite locations. That is a perpendicular drawn between the N+ diffusions of one adjacent region may intersect P+ diffusions in the other adjacent region, and vice versa.

公开(公告)号：US20160056146A1

公开(公告)日：2016-02-25

申请号：US14684872

申请日：2015-04-13

Applicant: Apple Inc.

Inventor： Junjun Li ,  Xin Yi Zhang ,  Xiaofeng Fan

IPC: H01L27/02 ,  H01L29/06 ,  H01L29/74 ,  H01L29/10 ,  H01L27/06 ,  H01L27/088 ,  H01L29/744

CPC classification number: H01L27/0259 ,  H01L27/0262 ,  H01L27/0635 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/7416 ,  H01L29/7436 ,  H01L29/744

Abstract: In an embodiment, an ESD protection circuit may include an STI-bound SCR and a gated SCR that may be electrically in parallel with the STI-bound SCR. The gated SCR may be perpendicular to the STI-bound SCR in a plane of the semiconductor substrate. In an embodiment, the gated SCR may trigger more quickly and turn on more quickly than the STI-bound SCR. The STI-bound SCR may form the main current path for an ESD event. A low capacitive load with rapid response to ESD events may thus be formed. In an embodiment, the anode of the two SCRs may be shared.

Abstract translation: 在一个实施例中，ESD保护电路可以包括可以与STI结合的SCR并联的STI结合的SCR和门控SCR。 门控SCR可以在半导体衬底的平面中垂直于STI结合的SCR。 在一个实施例中，门控SCR可以比STI结合的SCR更快地触发并且更快地触发。 STI结合的SCR可以形成用于ESD事件的主电流路径。 因此可以形成具有对ESD事件的快速响应的低容性负载。 在一个实施例中，两个SCR的阳极可以共享。

公开(公告)号：US20160020203A1

公开(公告)日：2016-01-21

申请号：US14533187

申请日：2014-11-05

Applicant: Apple Inc.

Inventor： Xin Yi Zhang ,  Xiaofeng Fan ,  Junjun Li

IPC: H01L27/02 ,  H01L29/78

CPC classification number: H01L27/0255 ,  H01L29/785

Abstract: In an embodiment, an ESD protection circuit is provided in which diodes may be formed between N+ and P+ diffusions within an insulated semiconductor region and in which additional diodes may be formed between adjacent insulated regions of opposite conduction type as well. The diodes may be used in parallel to form an ESD protection circuit, which may have low on resistance and may sink high ESD current per unit area. To support the formation of the ESD protection circuit, each silicon region may have alternating N+ and P+ diffusions, and adjacent silicon regions may have N+ and P+ diffusions alternating in opposite locations. That is a perpendicular drawn between the N+ diffusions of one adjacent region may intersect P+ diffusions in the other adjacent region, and vice versa.

Abstract translation: 在一个实施例中，提供ESD保护电路，其中可以在绝缘半导体区域内的N +和P +扩散之间形成二极管，并且可以在相邻导电类型的相邻绝缘区域之间形成附加二极管。 二极管可以并联使用以形成ESD保护电路，其可以具有低导通电阻并且可能吸收每单位面积的高ESD电流。 为了支持ESD保护电路的形成，每个硅区域可以具有交替的N +和P +扩散，并且相邻的硅区域可以在相对的位置上交替地具有N +和P +扩散。 这是在一个相邻区域的N +扩散之间绘制的垂线可以在另一相邻区域中相交P +扩散，反之亦然。

公开(公告)号：US20170214241A1

公开(公告)日：2017-07-27

申请号：US15175792

申请日：2016-06-07

Applicant: Apple Inc.

Inventor： Xiaofeng Fan ,  Xin Y. Zhang ,  Junjun Li

IPC: H02H9/04 ,  H02H1/00

CPC classification number: H02H9/046 ,  H01L27/0285 ,  H02H1/0007 ,  H02H3/20 ,  H02H9/041 ,  H05K1/0259

Abstract: An apparatus includes a device, a comparison circuit, and a switch. The device includes a first terminal coupled to a first power supply signal, and a second terminal coupled to a ground reference. The comparison circuit is configured to compare a first voltage level on the first power supply signal to a second voltage level of a second power supply signal, and enable the device in response to a determination that the first voltage level is greater than the second voltage level. The switch circuit is configured to couple a power supply terminal of the comparison circuit to the first power supply signal in response to determining that the first voltage level is greater than the second voltage level, and to couple the power supply terminal to the second power supply signal in response to determining that the first voltage level is less than the second voltage level.

公开(公告)号：US09318479B2

公开(公告)日：2016-04-19

申请号：US14684872

申请日：2015-04-13

Applicant: Apple Inc.

Inventor： Junjun Li ,  Xin Yi Zhang ,  Xiaofeng Fan

IPC: H01L27/02 ,  H01L27/088 ,  H01L29/06 ,  H01L29/744 ,  H01L29/10 ,  H01L27/06 ,  H01L29/74 ,  H01L21/00

CPC classification number: H01L27/0259 ,  H01L27/0262 ,  H01L27/0635 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/7416 ,  H01L29/7436 ,  H01L29/744

Abstract: In an embodiment, an ESD protection circuit may include an STI-bound SCR and a gated SCR that may be electrically in parallel with the STI-bound SCR. The gated SCR may be perpendicular to the STI-bound SCR in a plane of the semiconductor substrate. In an embodiment, the gated SCR may trigger more quickly and turn on more quickly than the STI-bound SCR. The STI-bound SCR may form the main current path for an ESD event. A low capacitive load with rapid response to ESD events may thus be formed. In an embodiment, the anode of the two SCRs may be shared.

Abstract translation: 在一个实施例中，ESD保护电路可以包括可以与STI结合的SCR并联的STI结合的SCR和门控SCR。 门控SCR可以在半导体衬底的平面中垂直于STI结合的SCR。 在一个实施例中，门控SCR可以比STI结合的SCR更快地触发并且更快地触发。 STI结合的SCR可以形成用于ESD事件的主电流路径。 因此可以形成具有对ESD事件的快速响应的低容性负载。 在一个实施例中，两个SCR的阳极可以共享。

公开(公告)号：US20230352932A1

公开(公告)日：2023-11-02

申请号：US17661503

申请日：2022-04-29

Applicant: Apple Inc.

Inventor： Junjun Li ,  Abbas Komijani ,  Hongrui Wang

IPC: H02H9/04 ,  H01L27/02

CPC classification number: H02H9/046 ,  H01L27/0255

Abstract: An output circuit included in an integrated circuit may employ multiple protection circuits to protect driver devices from damage during an electrostatic discharge event. One protection circuit clamps a signal port to a ground supply node upon detection of the electrostatic discharge event. Another protection circuit increases the voltage level of a control terminal to one of the driver devices during the electrostatic discharge event to reduce the voltage across the driver device and prevent damage to the device.

公开(公告)号：US11955796B2

公开(公告)日：2024-04-09

申请号：US17661503

申请日：2022-04-29

Applicant: Apple Inc.

Inventor： Junjun Li ,  Abbas Komijani ,  Hongrui Wang

IPC: H02H9/04 ,  H01L27/02

CPC classification number: H02H9/046 ,  H01L27/0255

Abstract: An output circuit included in an integrated circuit may employ multiple protection circuits to protect driver devices from damage during an electrostatic discharge event. One protection circuit clamps a signal port to a ground supply node upon detection of the electrostatic discharge event. Another protection circuit increases the voltage level of a control terminal to one of the driver devices during the electrostatic discharge event to reduce the voltage across the driver device and prevent damage to the device.

公开(公告)号：US09601480B2

公开(公告)日：2017-03-21

申请号：US14684841

申请日：2015-04-13

Applicant: Apple Inc.

Inventor： Junjun Li ,  Xin Yi Zhang ,  Xiaofeng Fan

IPC: H02H9/00 ,  H01L27/02 ,  H01L29/78

CPC classification number: H01L27/0262 ,  H01L27/0255 ,  H01L29/785

Abstract: In an embodiment, an ESD protection circuit may include a silicon-controlled rectifier (SCR) and a diode sharing a PN junction and forming a bi-directional ESD circuit. The single PN junction may reduce the capacitive load on the pin, which may allow the high speed circuit to meet its performance goals. In an embodiment, a floating P-well contact may be placed between two neighboring SCRs, to control triggering of the SCRs.

公开(公告)号：US20160056147A1

公开(公告)日：2016-02-25

申请号：US14684841

申请日：2015-04-13

Applicant: Apple Inc.

Inventor： Junjun Li ,  Xin Yi Zhang ,  Xiaofeng Fan

IPC: H01L27/02 ,  H01L29/78

CPC classification number: H01L27/0262 ,  H01L27/0255 ,  H01L29/785

Abstract: In an embodiment, an ESD protection circuit may include a silicon-controlled rectifier (SCR) and a diode sharing a PN junction and forming a bi-directional ESD circuit. The single PN junction may reduce the capacitive load on the pin, which may allow the high speed circuit to meet its performance goals. In an embodiment, a floating P-well contact may be placed between two neighboring SCRs, to control triggering of the SCRs.

Abstract translation: 在一个实施例中，ESD保护电路可以包括可控硅整流器（SCR）和共享PN结的二极管并形成双向ESD电路。 单个PN结可能会降低引脚上的容性负载，这可能使高速电路达到其性能目标。 在一个实施例中，可以在两个相邻SCR之间放置浮动P阱接触，以控制SCR的触发。