Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件及制造半导体器件的方法
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Application No.: US14818516Application Date: 2015-08-05
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Publication No.: US20160056233A1Publication Date: 2016-02-25
- Inventor: Akira MITSUIKI , Tomoo NAKAYAMA , Shigeaki SHIMIZU , Hiroyuki OKUAKI
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2014-168213 20140821
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/088 ; H01L21/311 ; H01L29/78 ; H01L21/762 ; H01L21/32

Abstract:
Electric-field concentration in the vicinity of a recess is suppressed. A gate insulating film is provided on a substrate that has a drain region and a first recess therein. The first recess is located between the gate insulating film and the drain region, and is filled with an insulating film. The insulating film has a second recess on its side close to the gate insulating film. An angle defined by an inner side face of the first recess and the surface of the substrate is rounded on a side of the drain region close to the gate insulating film.
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