Invention Application
US20160056244A1 NANOSTRUCTURES AND NANOFEATURES WITH Si (111) PLANES ON Si (100) WAFERS FOR III-N EPITAXY
审中-公开
用于III-N外延的Si（100）波长的Si（111）平面的纳米结构和纳米尺寸
- Patent Title: NANOSTRUCTURES AND NANOFEATURES WITH Si (111) PLANES ON Si (100) WAFERS FOR III-N EPITAXY
- Patent Title (中): 用于III-N外延的Si（100）波长的Si（111）平面的纳米结构和纳米尺寸
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Application No.: US14779257Application Date: 2013-06-28
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Publication No.: US20160056244A1Publication Date: 2016-02-25
- Inventor: Sansaptak DASGUPTA , Han Wui THEN , Sanaz K. GARDNER , Benjamin CHU-KUNG , Marko RADOSAVLJEVIC , Seung Hoon SUNG , Robert S. CHAU
- Applicant: INTEL CORPORATION
- International Application: PCT/US13/48757 WO 20130628
- Main IPC: H01L29/205
- IPC: H01L29/205 ; H01L29/04 ; H01L21/324 ; H01L29/06 ; H01L21/02 ; H01L21/308
Abstract:
A fin over an insulating layer on a substrate having a first crystal orientation is modified to form a surface aligned along a second crystal orientation. A device layer is deposited over the surface of the fin aligned along the second crystal orientation.
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