A method for fabricating a semiconductor device improving the process speed is provided. The method includes forming a fin on a substrate, forming a gate electrode on the fin, first ion-implanting a first impurity to amorphize a region including portions of the fin positioned at opposite sides of the gate electrode, forming a stress inducing layer on the substrate and the fin, and annealing the substrate to recrystallize the amorphized region, wherein after the forming of the fin and before the annealing, the method further includes second ion-implanting a second impurity different from the first impurity into the fin.