公开(公告)号：US20160056268A1

公开(公告)日：2016-02-25

申请号：US14638864

申请日：2015-03-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hock-Chun CHIN ,  Nak-Jin SON ,  Sang-Hyeon LEE

IPC: H01L29/66 ,  H01L21/265

CPC classification number: H01L29/66795 ,  H01L21/265 ,  H01L29/7847 ,  H01L29/7848

Abstract: A method for fabricating a semiconductor device improving the process speed is provided. The method includes forming a fin on a substrate, forming a gate electrode on the fin, first ion-implanting a first impurity to amorphize a region including portions of the fin positioned at opposite sides of the gate electrode, forming a stress inducing layer on the substrate and the fin, and annealing the substrate to recrystallize the amorphized region, wherein after the forming of the fin and before the annealing, the method further includes second ion-implanting a second impurity different from the first impurity into the fin.

Abstract translation: 提供了一种制造提高处理速度的半导体器件的方法。 该方法包括在衬底上形成翅片，在翅片上形成栅电极，首先离子注入第一杂质以使包括位于栅电极相对侧的翅片部分的区域非晶化，在该栅极上形成应力诱导层 衬底和鳍片，并且退火衬底以使非晶化区域重结晶，其中在形成鳍片之后并且在退火之前，该方法还包括将不同于第一杂质的第二杂质离子注入到鳍中。