Invention Application
- Patent Title: ION CONTROL FOR A PLASMA SOURCE
- Patent Title (中): 离子控制等离子体源
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Application No.: US14939759Application Date: 2015-11-12
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Publication No.: US20160064191A1Publication Date: 2016-03-03
- Inventor: Patrick Lawrence Morse
- Applicant: Sputtering Components, Inc.
- Main IPC: H01J37/32
- IPC: H01J37/32 ; C23C14/35 ; C23C14/34 ; H01J37/34
Abstract:
One embodiment is directed to an apparatus including a plasma source and operation electronics coupled to the plasma source. The plasma source includes at least two electrodes configured to generate plasma. The operation electronics are configured to generate plasma with the at least two electrodes and apply an ion flux modification bias to the at least two electrodes.
Information query
