Invention Application
US20160064250A1 METHODS OF FORMING METASTABLE REPLACEMENT FINS FOR A FINFET SEMICONDUCTOR DEVICE BY PERFORMING A REPLACEMENT GROWTH PROCESS
审中-公开
通过执行替代生长过程形成FINFET半导体器件的可替代替代FIS的方法
- Patent Title: METHODS OF FORMING METASTABLE REPLACEMENT FINS FOR A FINFET SEMICONDUCTOR DEVICE BY PERFORMING A REPLACEMENT GROWTH PROCESS
- Patent Title (中): 通过执行替代生长过程形成FINFET半导体器件的可替代替代FIS的方法
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Application No.: US14931277Application Date: 2015-11-03
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Publication No.: US20160064250A1Publication Date: 2016-03-03
- Inventor: Ajey P. Jacob , Murat K. Akarvardar , Jody Fronheiser , Witold P. Maszara
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/3105
Abstract:
Various methods are disclosed herein for forming alternative fin materials that are in a stable or metastable condition. In one case, a metastable replacement fin is grown to a height that is greater than an unconfined stable critical thickness of the replacement fin material and it has a defect density of 105 defects/cm2 or less throughout at least 90% of its entire height. In another case, a metastable replacement fin is grown to a height that is greater than an unconfined metastable critical thickness of the replacement fin material and it has a defect density of 105 defects/cm2 or less throughout at least 90% of its entire height.
Information query
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