Invention Application
US20160064447A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
审中-公开
半导体器件制造方法和半导体器件
- Patent Title: SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件制造方法和半导体器件
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Application No.: US14833605Application Date: 2015-08-24
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Publication No.: US20160064447A1Publication Date: 2016-03-03
- Inventor: Masatoshi KIMURA
- Applicant: RENESAS ELECTRONICS CORPORATION
- Priority: JP2014-172686 20140827
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
The invention improves performance of a solid-state image sensor in which each of the pixels arranged in a pixel array part includes a microlens and plural photodiodes. The locations of the opposing sides between the photodiodes arranged side by side in each pixel are self-alignedly defined by a gate pattern. The location over wiring where the microlens is to be formed is checked and determined using as a superposition mark a check pattern of the same layer as a gate layer.
Information query
IPC分类: