中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

13 records (took 0.019 seconds)

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20160295144A1

    公开(公告)日：2016-10-06

    申请号：US15077981

    申请日：2016-03-23

    Applicant: Renesas Electronics Corporation

    Inventor： Masatoshi KIMURA

    IPC: H04N5/378 ,  H04N5/225

    CPC classification number: H01L27/14645 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14641

    Abstract: To improve the performance of a solid-state imaging device which is formed by performing division exposure for exposure-processing the entire chip by a plurality of times of exposures and in which pixels arranged in a pixel array area in plural respectively have a plurality of photodiodes. Control signal wirings are coupled to respective photodiodes included in pixels in a first area being a first exposure area for division exposure. Control signal wirings and are coupled to respective photodiodes included in pixels in a second area being a second exposure area.

    Abstract translation: 为了提高固体摄像装置的性能，该固态成像装置通过进行多次曝光的整个芯片的曝光处理而形成的固态成像装置的性能，并且其中排列在多个像素阵列区域中的像素分别具有多个光电二极管 。 控制信号布线耦合到包括在第一区域中的像素中的各个光电二极管，其是用于分割曝光的第一曝光区域。 控制信号布线并且耦合到包括在第二区域中的像素中的相应的光电二极管，其是第二曝光区域。

    METHOD OF MANUFACTURING SEMICONDUCTOR UNIT AND THE SEMICONDUCTOR UNIT
    6.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR UNIT AND THE SEMICONDUCTOR UNIT 有权
    制造半导体单元和半导体单元的方法

    公开(公告)号：US20170077165A1

    公开(公告)日：2017-03-16

    申请号：US15201485

    申请日：2016-07-03

    Applicant: Renesas Electronics Corporation

    Inventor： Masatoshi KIMURA

    IPC: H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14689

    Abstract: In a solid-state imaging device including a plurality of pixels each pixel including a plurality of photodiodes, it is prevented that an incidence angle of incident light on the solid-state imaging device becomes large in a pixel in an end of the solid-state imaging device, causing a difference in output between the two photodiodes in the pixel, and thus autofocus detection accuracy is deteriorated. Photodiodes extending in a longitudinal direction of a pixel allay section are provided in each pixel. The photodiodes in the pixel are arranged in a direction orthogonal to the longitudinal direction of the pixel allay section.

    Abstract translation: 在包括多个像素的固态成像装置中，每个像素包括多个光电二极管，可以防止固态成像装置中入射光的入射角在固态的结束时的像素中变大 成像装置，导致像素中的两个光电二极管之间的输出差异，因此自动聚焦检测精度降低。 在每个像素中设置沿像素补偿部分的纵向方向延伸的光电二极管。 像素中的光电二极管与像素补偿部的纵向正交的方向配置。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    7.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
    制造半导体器件和半导体器件的方法

    公开(公告)号：US20170062500A1

    公开(公告)日：2017-03-02

    申请号：US15179964

    申请日：2016-06-10

    Applicant: Renesas Electronics Corporation

    Inventor： Masatoshi KIMURA

    IPC: H01L27/146

    CPC classification number: H01L27/14605 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14687

    Abstract: In each pixel having a plurality of photodiodes for one microlens of a plurality of pixels arranged in a pixel array part, the photoelectrically converted electrons are prevented from moving between the photodiodes, thereby to improve the electron isolating characteristic, resulting in improved performances of a semiconductor device. In a well region immediately under between a first N− type semiconductor region forming a first photodiode in a pixel and a second N− type semiconductor region forming a second photodiode in the pixel, an isolation region higher in impurity density than the well region is formed.

    Abstract translation: 在具有布置在像素阵列部分中的多个像素的一个微透镜的多个光电二极管的每个像素中，防止光电转换的电子在光电二极管之间移动，从而提高电子隔离特性，从而提高半导体的性能 设备。 在形成像素中的第一光电二极管的第一N-型半导体区域和形成像素中的第二光电二极管的第二N-型半导体区域之间的阱区中，形成了比阱区域更高的杂质浓度的隔离区域 。

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20160284759A1

    公开(公告)日：2016-09-29

    申请号：US15077011

    申请日：2016-03-22

    Applicant: Renesas Electronics Corporation

    Inventor： Masatoshi KIMURA

    IPC: H01L27/146 ,  H04N5/335

    CPC classification number: H01L27/14643 ,  H01L27/14605 ,  H01L27/14641 ,  H04N5/23212 ,  H04N5/3694 ,  H04N5/3696

    Abstract: In a solid state image sensor which has two photodiodes juxtaposed in a predetermined direction in each pixel and is formed by carrying out divided exposure, that is, exposure treatment of an entire chip by a plurality of times of exposure, image quality is improved and autofocusing speed is increased. Provided is a solid state image sensor having a first exposure region having a first region and a second exposure region having a second region. They overlap with each other in a third region between the first and second regions. In a pixel formed in the third region, a photodiode formed through a mask for first exposure region is placed at a position closer to the side of the second region than another photodiode formed through a mask for second exposure region is.

    Abstract translation: 在具有两个光电二极管的固态图像传感器中，每个像素中的预定方向并置并且通过进行分割曝光形成，即通过多次曝光来对整个芯片进行曝光处理，提高图像质量并自动聚焦 速度提高。 提供一种固态图像传感器，其具有具有第一区域的第一曝光区域和具有第二区域的第二曝光区域。 它们在第一和第二区域之间的第三区域中彼此重叠。 在形成在第三区域的像素中，通过第一曝光区域的掩模形成的光电二极管被放置在比通过第二曝光区域的掩模形成的另一光电二极管更靠近第二区域侧的位置。

    SEMICONDUCTOR DEVICE INCLUDING A SOLID STATE IMAGING DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING A SOLID STATE IMAGING DEVICE 审中-公开
    包括固态成像装置的半导体器件

    公开(公告)号：US20160351614A1

    公开(公告)日：2016-12-01

    申请号：US15232334

    申请日：2016-08-09

    Applicant: Renesas Electronics Corporation

    Inventor： Masatoshi KIMURA

    IPC: H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14641 ,  H01L27/14689

    Abstract: A semiconductor device is reduced in power consumption, the semiconductor device including a solid-state imaging device that includes pixels each having a plurality of light receiving elements. A pixel having first and second photodiodes is provided with a first transfer transistor that transfers charge in the first photodiode to a floating diffusion capacitance section, and a second transfer transistor that combines charge in the first photodiode and charge in the second photodiode, and transfers the combined charge to the floating diffusion capacitance section. Consequently, the semiconductor device is reduced in power required for activation of each transfer transistor in operation such as imaging with the solid-state imaging device.

    Abstract translation: 半导体器件的功耗降低，该半导体器件包括固态成像器件，其包括各自具有多个光接收元件的像素。 具有第一和第二光电二极管的像素设置有将第一光电二极管中的电荷传送到浮动扩散电容部分的第一传输晶体管，以及组合第一光电二极管中的电荷并在第二光电二极管中充电的第二传输晶体管， 组合电荷到浮动扩散电容部分。 因此，半导体器件在诸如利用固态成像器件的成像的操作中激活每个传输晶体管所需的功率降低。

Patent Agency Ranking