Invention Application
US20160071260A1 Enhanced Patterned Wafer Geometry Measurements Based Design Improvements for Optimal Integrated Chip Fabrication Performance 有权
基于增强图案化晶圆几何测量的设计改进,优化集成芯片制造性能

Enhanced Patterned Wafer Geometry Measurements Based Design Improvements for Optimal Integrated Chip Fabrication Performance
Abstract:
Methods and systems enabling ultra-high resolution topography measurements of patterned wafers are disclosed. Measurements obtained utilizing the ultra-high resolution metrology may be utilized to improve wafer metrology measurement accuracies. Additionally, measurements obtained utilizing the ultra-high resolution metrology may also be utilized to provide feedback and/or calibration control to improve fabrication and design of wafers.
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