Invention Application
- Patent Title: Methods of Fabricating Semiconductor Devices with Flattened Hardmask Layers
- Patent Title (中): 用扁平硬掩模层制造半导体器件的方法
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Application No.: US14737962Application Date: 2015-06-12
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Publication No.: US20160071736A1Publication Date: 2016-03-10
- Inventor: DoYoung Kim , Kyoungsil Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Priority: KR10-2014-0118593 20140905
- Main IPC: H01L21/308
- IPC: H01L21/308 ; G03F7/32 ; H01L21/311 ; G03F7/20 ; H01L21/027 ; H01L21/02
Abstract:
Methods of fabricating semiconductor devices may include forming a hardmask layer including a photosensitive hardmask material on lower structures. The hardmask layer may include a lower portion and an upper portion thereon. An exposing and developing process may be performed on the hardmask layer to remove the upper portion of the hardmask layer and thereby form a hardmask structure with a substantially flat top surface.
Public/Granted literature
- US09829795B2 Methods of fabricating semiconductor devices with flattened hardmask layers Public/Granted day:2017-11-28
Information query
IPC分类:
