公开(公告)号：US20180039181A1

公开(公告)日：2018-02-08

申请号：US15783593

申请日：2017-10-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： DoYoung Kim ,  Kyoungsil Park

IPC: G03F7/32 ,  H01L21/3105 ,  H01L21/027 ,  H01L21/311 ,  H01L21/033

CPC classification number: G03F7/32 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/311 ,  H01L21/31144

Abstract: Methods of fabricating semiconductor devices may include forming a hardmask layer including a photosensitive hardmask material on lower structures. The hardmask layer may include a lower portion and an upper portion thereon. An exposing and developing process may be performed on the hardmask layer to remove the upper portion of the hardmask layer and thereby form a hardmask structure with a substantially flat top surface.

公开(公告)号：US20160071736A1

公开(公告)日：2016-03-10

申请号：US14737962

申请日：2015-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DoYoung Kim ,  Kyoungsil Park

IPC: H01L21/308 ,  G03F7/32 ,  H01L21/311 ,  G03F7/20 ,  H01L21/027 ,  H01L21/02

CPC classification number: G03F7/32 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/311 ,  H01L21/31144

Abstract: Methods of fabricating semiconductor devices may include forming a hardmask layer including a photosensitive hardmask material on lower structures. The hardmask layer may include a lower portion and an upper portion thereon. An exposing and developing process may be performed on the hardmask layer to remove the upper portion of the hardmask layer and thereby form a hardmask structure with a substantially flat top surface.

Abstract translation: 制造半导体器件的方法可以包括在下部结构上形成包括光敏硬掩模材料的硬掩模层。 硬掩模层可以包括下部和其上的上部。 可以在硬掩模层上进行曝光和显影处理以去除硬掩模层的上部，从而形成具有基本平坦的顶表面的硬掩模结构。

公开(公告)号：US10431506B2

公开(公告)日：2019-10-01

申请号：US15848896

申请日：2017-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dusik Bae ,  Yoonmi Lee ,  Hyeogki Kim ,  Kyoungsil Park ,  JungDae Park

IPC: H01L21/66 ,  H01L21/311 ,  G01N21/65 ,  H01L21/67 ,  H01L21/033 ,  G01N21/956

Abstract: Disclosed are a method of processing a substrate and a method of fabricating a semiconductor device using the same. The method of processing a substrate comprises forming a mask layer on a substrate, inspecting the mask layer, and forming a mask pattern based on an inspection result of the mask layer. The operation of inspecting the mask layer comprises using Raman spectrum analysis to detect defects in the mask layer.

公开(公告)号：US20180204777A1

公开(公告)日：2018-07-19

申请号：US15848896

申请日：2017-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dusik BAE ,  Yoonmi Lee ,  Hyeogki Kim ,  Kyoungsil Park ,  JungDae Park

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/311 ,  G01N21/65

CPC classification number: H01L22/12 ,  G01N21/65 ,  G01N21/9501 ,  G01N2021/8427 ,  G01N2021/95676 ,  H01L21/0334 ,  H01L21/31116 ,  H01L21/67069 ,  H01L22/20 ,  H01L22/24 ,  H01L22/26

Abstract: Disclosed are a method of processing a substrate and a method of fabricating a semiconductor device using the same. The method of processing a substrate comprises forming a mask layer on a substrate, inspecting the mask layer, and forming a mask pattern based on an inspection result of the mask layer. The operation of inspecting the mask layer comprises using Raman spectrum analysis to detect defects in the mask layer.

公开(公告)号：US09829795B2

公开(公告)日：2017-11-28

申请号：US14737962

申请日：2015-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： DoYoung Kim ,  Kyoungsil Park

IPC: H01L21/308 ,  G03F7/32 ,  H01L21/027 ,  H01L21/311 ,  H01L21/033 ,  H01L21/3105

CPC classification number: G03F7/32 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/311 ,  H01L21/31144

Abstract: Methods of fabricating semiconductor devices may include forming a hardmask layer including a photosensitive hardmask material on lower structures. The hardmask layer may include a lower portion and an upper portion thereon. An exposing and developing process may be performed on the hardmask layer to remove the upper portion of the hardmask layer and thereby form a hardmask structure with a substantially flat top surface.