Invention Application
US20160071845A1 DIRECTED SELF-ASSEMBLY MATERIAL GROWTH MASK FOR FORMING VERTICAL NANOWIRES
有权
用于形成垂直纳米线的方向自组装材料生长掩模
- Patent Title: DIRECTED SELF-ASSEMBLY MATERIAL GROWTH MASK FOR FORMING VERTICAL NANOWIRES
- Patent Title (中): 用于形成垂直纳米线的方向自组装材料生长掩模
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Application No.: US14476879Application Date: 2014-09-04
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Publication No.: US20160071845A1Publication Date: 2016-03-10
- Inventor: Steven Bentley , Richard A. Farrell , Gerard Schmid , Ajey Poovannummoottil Jacob
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/06 ; H01L21/311 ; H01L21/308 ; H01L21/306 ; H01L29/78 ; H01L21/8234
Abstract:
A method includes forming at least one fin on a semiconductor substrate. A hard mask layer is formed above the fin. A first directed self-assembly material is formed above the hard mask layer. The hard mask layer is patterned using a portion of the first directed self-assembly material as an etch mask to expose a portion of the top surface of the fin. A substantially vertical nanowire is formed on the exposed top surface. At least one dimension of the substantially vertical nanowire is defined by an intrinsic pitch of the first directed self-assembly material.
Public/Granted literature
- US09698025B2 Directed self-assembly material growth mask for forming vertical nanowires Public/Granted day:2017-07-04
Information query
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