发明申请
- 专利标题： SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 半导体存储器件及其制造方法
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申请号： US14629087申请日： 2015-02-23
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公开(公告)号： US20160072047A1公开(公告)日： 2016-03-10
- 发明人: Satoshi SETO , Masatoshi YOSHIKAWA , Shuichi TSUBATA , Kazuhiro TOMIOKA
- 申请人： Satoshi SETO , Masatoshi YOSHIKAWA , Shuichi TSUBATA , Kazuhiro TOMIOKA
- 主分类号： H01L43/08
- IPC分类号： H01L43/08 ; H01L43/12 ; H01L43/02
摘要：
According to one embodiment, a semiconductor memory device includes a lower electrode, an MTJ element, a cap layer and an upper electrode. The lower electrode is provided above a semiconductor substrate. The MTJ element is provided above the lower electrode. The cap layer is provided above the MTJ element and is oxygen-free. The upper electrode is connected to the cap layer.
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