Invention Application
- Patent Title: THERMAL INKJET PRINTHEAD STACK WITH AMORPHOUS THIN METAL PROTECTIVE LAYER
- Patent Title (中): 热熔喷头与非晶金属保护层堆叠
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Application No.: US14787711Application Date: 2013-07-12
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Publication No.: US20160075136A1Publication Date: 2016-03-17
- Inventor: James Elmer ABBOTT, JR. , Arun K. AGARWAL , Roberto A. PUGLIESE , Greg Scott LONG , Stephen HORVATH , Douglas A. KESZLER , John WAGER , Kristopher OLSEN , John MCGLONE
- Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Applicant Address: US TX Houston US OR Corvallis
- Assignee: Hewlett-Packard Development Company, L.P.,Oregon State University
- Current Assignee: Hewlett-Packard Development Company, L.P.,Oregon State University
- Current Assignee Address: US TX Houston US OR Corvallis
- International Application: PCT/US2013/050203 WO 20130712
- Main IPC: B41J2/14
- IPC: B41J2/14 ; B41J2/16

Abstract:
The present disclosure is drawn to a thermal inkjet printhead stack with an amorphous thin metal protective layer, comprising an insulated substrate, a resistor applied to the insulated substrate, a resistor passivation layer applied to the resistor, and an amorphous thin metal protective layer applied to the resistor passivation layer. The amorphous thin metal protective layer can comprise from 5 atomic % to 90 atomic % of a metalloid of carbon, silicon, or boron. The film can also include a first and second metal, each comprising from 5 atomic % to 90 atomic % of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum. The second metal is different than the first metal, and the metalloid, the first metal, and the second metal account for at least 70 atomic % of the amorphous thin metal protective layer.
Public/Granted literature
- US09511585B2 Thermal inkjet printhead stack with amorphous thin metal protective layer Public/Granted day:2016-12-06
Information query
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