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    EVAPORATION COMPENSATION IN A FLUIDIC DEVICE
    1.
    发明申请
    EVAPORATION COMPENSATION IN A FLUIDIC DEVICE 有权

    公开(公告)号：US20220203349A1

    公开(公告)日：2022-06-30

    申请号：US17607309

    申请日：2019-07-31

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

    Inventor： Jeffrey A. NIELSEN ,  Roberto A. PUGLIESE

    IPC: B01L3/02 ,  B01L3/00 ,  G01N35/10

    Abstract: Aspects of the present disclosure relate to evaporation compensation in fluidic devices. An example apparatus for evaporation compensation includes an assessment circuit to determine an amount of evaporation of a volume dispensed in a microwell of a fluidic device. The amount of evaporation may be determined based on the volume in the microwell, and an amount of time after dispensing the volume in the microwell. A compensation circuit may determine, based on the amount of evaporation, a compensation factor for the microwell including an amount of a normalizing fluid to compensate for the amount of evaporation. The compensation circuit may also create a normalization profile for the fluidic device, including an association between the fluidic device and the compensation factor. A dispensing circuit may dispense the normalizing fluid in the microwell according to the normalization profile.

    THERMAL INKJET PRINTHEAD STACK WITH AMORPHOUS THIN METAL PROTECTIVE LAYER
    3.
    发明申请
    THERMAL INKJET PRINTHEAD STACK WITH AMORPHOUS THIN METAL PROTECTIVE LAYER 有权
    热熔喷头与非晶金属保护层堆叠

    公开(公告)号：US20160075136A1

    公开(公告)日：2016-03-17

    申请号：US14787711

    申请日：2013-07-12

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

    Inventor： James Elmer ABBOTT, JR. ,  Arun K. AGARWAL ,  Roberto A. PUGLIESE ,  Greg Scott LONG ,  Stephen HORVATH ,  Douglas A. KESZLER ,  John WAGER ,  Kristopher OLSEN ,  John MCGLONE

    IPC: B41J2/14 ,  B41J2/16

    CPC classification number: B41J2/14112 ,  B41J2/14016 ,  B41J2/14088 ,  B41J2/14129 ,  B41J2/164 ,  B41J2/1646 ,  B41J2/1648 ,  B41J2202/03 ,  B41J2202/11

    Abstract: The present disclosure is drawn to a thermal inkjet printhead stack with an amorphous thin metal protective layer, comprising an insulated substrate, a resistor applied to the insulated substrate, a resistor passivation layer applied to the resistor, and an amorphous thin metal protective layer applied to the resistor passivation layer. The amorphous thin metal protective layer can comprise from 5 atomic % to 90 atomic % of a metalloid of carbon, silicon, or boron. The film can also include a first and second metal, each comprising from 5 atomic % to 90 atomic % of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum. The second metal is different than the first metal, and the metalloid, the first metal, and the second metal account for at least 70 atomic % of the amorphous thin metal protective layer.

    Abstract translation: 本公开涉及具有非晶金属保护层的热喷墨打印头堆叠，其包括绝缘基板，施加到绝缘基板的电阻器，施加到电阻器的电阻器钝化层以及施加到电阻器的非晶薄金属保护层 电阻钝化层。 非晶态金属保护层可以包含5原子％至90原子％的碳，硅或硼准金属。 该膜还可以包括第一和第二金属，每个包含5原子％至90原子％的钛，钒，铬，钴，镍，锆，铌，钼，铑，钯，铪，钽，钨，铱， 或铂金。 第二金属与第一金属不同，并且准金属，第一金属和第二金属占非晶金属保护层的至少70原子％。

    AMORPHOUS THIN METAL FILM
    5.
    发明申请
    AMORPHOUS THIN METAL FILM 审中-公开
    非晶金属薄膜

    公开(公告)号：US20160168675A1

    公开(公告)日：2016-06-16

    申请号：US14787719

    申请日：2013-07-12

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

    Inventor： James Elmer ABBOTT, JR. ,  Arun K. AGARWAL ,  Roberto A. PUGLIESE ,  Greg Scott LONG ,  Stephen HORVATH ,  Douglas A. KESZLER ,  John WAGER ,  Kristopher OLSEN ,  John MCGLONE

    IPC: C22C45/10 ,  C23C14/34 ,  C23C14/14 ,  C22C27/02 ,  C22C27/04

    CPC classification number: C22C45/10 ,  C22C1/002 ,  C22C27/02 ,  C22C27/04 ,  C22C45/00 ,  C23C14/14 ,  C23C14/165 ,  C23C14/34

    Abstract: The present disclosure is drawn to amorphous thin metal films and associated methods. Generally, an amorphous thin metal film can comprise a combination of four metals or metalloids including: 5 at % to 85 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 85 at % of a first metal; 5 at % to 85 at % of a second metal; and 5 at % to 85 at % of a third metal wherein each metal is independently selected from the group of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, and platinum, wherein the first metal, the second metal, and the third metal are different metals. Typically, the four elements account for at least 70 at % of the amorphous thin metal film.

    Abstract translation: 本公开涉及无定形薄金属薄膜和相关方法。 通常，无定形薄金属膜可以包括四种金属或准金属的组合，包括：5at％至85at％的选自碳，硅和硼的准金属; 5原子％至85原子％的第一金属; 5at％至85at％的第二金属; 和5原子％至85原子％的第三金属，其中每种金属独立地选自钛，钒，铬，钴，镍，锆，铌，钼，铑，钯，铪，钽，钨，铱， 和铂，其中第一金属，第二金属和第三金属是不同的金属。 通常，四种元素占非晶薄金属膜的至少70原子％。

    AMORPHOUS THIN METAL FILM
    7.
    发明申请
    AMORPHOUS THIN METAL FILM 审中-公开
    非晶金属薄膜

    公开(公告)号：US20160160331A1

    公开(公告)日：2016-06-09

    申请号：US14787638

    申请日：2013-07-12

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

    Inventor： James Elmer ABBOTT, JR. ,  Arun K. AGARWAL ,  Roberto A. PUGLIESE ,  Greg Scott LONG ,  Stephen HORVATH ,  John WAGER ,  Douglas A. KESZLER ,  Kristopher OLSEN ,  John MCGLONE

    IPC: C22C45/10 ,  C23C14/34 ,  C23C14/14

    CPC classification number: C22C45/10 ,  C23C14/14 ,  C23C14/34

    Abstract: The present disclosure is drawn to amorphous thin metal films and associated methods. Generally, an amorphous thin metal film can comprise a combination of three metals or metalloids including: 5 at % to 90 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 90 at % of a first metal selected from the group of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, and platinum; and 5 at % to 90 at % of a second metal selected from the group of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, and platinum, wherein the second metal is different than the first metal. Typically, the three elements account for at least 70 at % of the amorphous thin metal film.

    Abstract translation: 本公开涉及无定形薄金属薄膜和相关方法。 通常，无定形薄金属膜可以包括三种金属或准金属的组合，包括：5at％至90at％的选自碳，硅和硼的准金属; 5原子％至90原子％的选自钛，钒，铬，钴，镍，锆，铌，钼，铑，钯，铪，钽，钨，铱和铂的第一金属。 和选自钛，钒，铬，钴，镍，锆，铌，钼，铑，钯，铪，钽，钨，铱和铂的第二金属的5原子％至90原子％ 第二金属与第一金属不同。 通常，三种元素占非晶金属薄膜的至少70原子％。

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