- 专利标题： Bay-Annulated Indigo (BAI) As An Excellent Electron Accepting Building Block for High Performance Organic Semiconductors
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申请号： US14942775申请日： 2015-11-16
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公开(公告)号： US20160075878A1公开(公告)日： 2016-03-17
- 发明人: Yi Liu , Bo He , Andrew Pun
- 申请人： Yi Liu , Bo He , Andrew Pun
- 申请人地址： US CA Oakland
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： US CA Oakland
- 主分类号： C09B7/02
- IPC分类号： C09B7/02 ; H01L51/00
摘要：
A novel electron acceptor based on bay-annulated indigo (BAI) was synthesized and used for the preparation of a series of high performance donor-acceptor small molecules and polymers. The resulting materials possess low-lying LUMO energy level and small HOMO-LUMO gaps, while their films exhibited high crystallinity upon thermal treatment, commensurate with high field effect mobilities and ambipolar transfer characteristics.
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