Invention Application
US20160086959A1 STRUCTURE AND METHOD FOR MANUFACTURE OF MEMORY DEVICE WITH THIN SILICON BODY
审中-公开
具有薄硅体的存储器件的结构和方法
- Patent Title: STRUCTURE AND METHOD FOR MANUFACTURE OF MEMORY DEVICE WITH THIN SILICON BODY
- Patent Title (中): 具有薄硅体的存储器件的结构和方法
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Application No.: US14935483Application Date: 2015-11-09
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Publication No.: US20160086959A1Publication Date: 2016-03-24
- Inventor: Hyoung Seub RHIE
- Applicant: Conversant Intellectual Property Management Inc.
- Applicant Address: CA Ottawa
- Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee Address: CA Ottawa
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L21/28 ; H01L21/306 ; H01L29/66
Abstract:
Described herein is a structure and method of manufacturing for a memory device with a thin silicon body. The memory device may be a semiconductor comprising: a first dielectric of a first width; a second dielectric of a second width, the second width less than the first width; and a thin film polycrystalline silicon (poly-Si) on sidewalls of the second dielectric.
Public/Granted literature
- US09343473B2 Structure and method for manufacture of memory device with thin silicon body Public/Granted day:2016-05-17
Information query
IPC分类:
