INSULATING GATE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF MAKING THE SAME

Invention Application

US20160087091A1 INSULATING GATE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF MAKING THE SAME 有权

Title translation: 绝缘栅场效应晶体管器件及其制造方法

Please log in to see more content

Patent Title: INSULATING GATE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF MAKING THE SAME
Patent Title (中): 绝缘栅场效应晶体管器件及其制造方法
Application No.: US14787545

Application Date: 2013-11-18
Publication No.: US20160087091A1

Publication Date: 2016-03-24
Inventor: Stephen Daley Arthur , Kevin Sean MATOCHA , Ramakrishna RAO , Peter Almern LOSEE , Alexander Viktorovich BOLOTNIKOV
Applicant: GENERAL ELECTRIC COMPANY
International Application: PCT/US13/70522 WO 20131118
Main IPC: H01L29/78
IPC: H01L29/78 ; H03K17/687 ; H01L27/088 ; H01L29/10 ; H01L29/16 ; H01L29/423

INSULATING GATE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF MAKING THE SAME

Abstract:

An insulated gate field-effect transistor (IGFET) device includes a semiconductor body (200) and a gate oxide (234). The semiconductor body includes a first well region (216) doped with a first type of dopant and a second well region (220) that is doped with an opposite, second type of dopant and is located within the first well region. The gate oxide includes a relatively thinner outer section (244) and a relatively thicker interior section (246). The outer section is disposed over the first well region and the second well region. The interior section is disposed over a junction gate field effect transistor region (218) of the semiconductor body doped with the second type of dopant. A conductive channel is formed through the second well region when a gate signal is applied to a gate contact (250) disposed on the gate oxide.

Abstract(Chinese):

绝缘栅场效应晶体管（IGFET）器件包括半导体本体（200）和栅氧化层（234）。半导体本体包括掺杂有第一类型掺杂剂的第一阱区域（216）和掺杂有相对的第二类型掺杂剂并且位于第一阱区域内的第二阱区域（220）。栅极氧化物包括相对较薄的外部部分（244）和相对较厚的内部部分（246）。外部部分设置在第一井区域和第二井区域上。内部部分设置在掺杂有第二类型掺杂剂的半导体主体的结栅场效应晶体管区域（218）上。当栅极信号施加到设置在栅极氧化物上的栅极接触（250）时，通过第二阱区形成导电沟道。

Public/Granted literature

US09735263B2 Transistor and switching system comprising silicon carbide and oxides of varying thicknesses, and method for providing the same Public/Granted day:2017-08-15

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的