发明申请
US20160090355A1 SULFONIUM SALT, RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS
有权
硫酸盐，耐腐蚀组合物和抗蚀剂图案形成工艺
- 专利标题： SULFONIUM SALT, RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS
- 专利标题（中）： 硫酸盐，耐腐蚀组合物和抗蚀剂图案形成工艺
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申请号： US14861303申请日： 2015-09-22
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公开(公告)号： US20160090355A1公开(公告)日： 2016-03-31
- 发明人: Daisuke Domon , Satoshi Watanabe , Keiichi Masunaga , Masahiro Fukushima
- 申请人： SHIN-ETSU CHEMICAL CO., LTD.
- 申请人地址： JP Tokyo
- 专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2014-195029 20140925
- 主分类号： C07C305/24
- IPC分类号： C07C305/24 ; G03F7/039 ; G03F1/76 ; G03F7/20 ; G03F7/32 ; G03F7/004 ; G03F7/038
摘要：
A sulfonium salt of formula (0-1) is provided wherein W is alkylene or arylene, R01 is a monovalent hydrocarbon group, m is 0, 1 or 2, k is an integer: 0≦k≦5+4m, R101, R102 and R103 are a monovalent hydrocarbon group, or at least two of R101, R102 and R103 may bond together to form a ring with the sulfur atom, and L is a single bond, ester, sulfonic acid ester, carbonate or carbamate bond. A resist composition comprising the sulfonium salt as PAG exhibits a very high resolution when processed by EB and EUV lithography. A pattern with minimal LER is obtainable.
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