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公开(公告)号：US20230341775A1
公开(公告)日：2023-10-26
申请号：US18137081
申请日：2023-04-20
发明人： Masaaki Kotake , Satoshi Watanabe , Keiichi Masunaga , Masahiro Fukushima , Kenji Funatsu , Yuta Matsuzawa
IPC分类号： G03F7/039 , C08F212/14 , G03F7/004 , G03F1/22
CPC分类号： G03F7/0397 , C08F212/24 , G03F7/0045 , G03F1/22
摘要： A chemically amplified positive resist composition is provided comprising (A) an acid diffusion-controlling agent in the form of an onium salt compound having a specific phenoxide anion, (B) a polymer comprising specific repeat units and adapted to be decomposed under the action of acid to increase its solubility in alkaline developer, and (C) a photoacid generator. A resist pattern with a high resolution, reduced LER, and improved CDU is formed. Because of minimal defects, the resist pattern can be inspected with light of short wavelength 300-400 nm.
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公开(公告)号：US20220308451A1
公开(公告)日：2022-09-29
申请号：US17691352
申请日：2022-03-10
IPC分类号： G03F7/039 , C08F212/14 , G03F1/50
摘要： A chemically amplified positive resist composition is provided comprising a base polymer which contains a polymer comprising an acid generating unit, a phenolic hydroxy group-containing unit, a unit containing a phenolic hydroxy group protected with an acid labile group, and a unit containing a carboxy group protected with an acid labile group. A resist pattern with a high resolution, reduced LER, improved rectangularity, and minimized influence of develop loading can be formed.
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公开(公告)号：US20200278607A1
公开(公告)日：2020-09-03
申请号：US16158103
申请日：2018-10-11
发明人： Luisa D. Bozano , Daisuke Domon , Yoshio Kawai , Keiichi Masunaga , Martha I. Sanchez , Daniel P. Sanders , Ratnam Sooriyakumaran , Linda K. Sundberg , Satoshi Watanabe
IPC分类号： G03F7/004 , G03F7/20 , C08F220/18 , C08F220/30 , G03F7/038 , G03F7/32
摘要： A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers.
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公开(公告)号：US20180180998A1
公开(公告)日：2018-06-28
申请号：US15854990
申请日：2017-12-27
IPC分类号： G03F7/038 , G03F7/004 , C07C323/20 , C08F212/14
摘要： A negative resist composition comprising a sulfonium compound having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER.
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公开(公告)号：US20180180992A1
公开(公告)日：2018-06-28
申请号：US15854244
申请日：2017-12-26
IPC分类号： G03F7/004 , C07C381/12
CPC分类号： G03F7/004 , C07C317/04 , C07C317/28 , C07C381/12 , G03F7/0045 , G03F7/033 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/2059 , G03F7/322
摘要： A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of formula (A) has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.
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公开(公告)号：US09944738B2
公开(公告)日：2018-04-17
申请号：US15206684
申请日：2016-07-11
IPC分类号： C08F216/10 , G03F1/78 , G03F7/039 , G03F7/09 , G03F7/20 , G03F7/32 , C08F220/38
CPC分类号： C08F216/10 , C08F220/38 , G03F1/78 , G03F7/0045 , G03F7/0046 , G03F7/039 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/093 , G03F7/2059 , G03F7/322 , C08F216/02 , C08F212/32 , C08F216/1416 , C08F2220/382
摘要： A polymer compound containing a repeating unit shown by the formula (1c) and one or more repeating units selected from a repeating unit shown by the formula (2) and a repeating unit shown by the formula (3), wherein Mb+ represents a sulfonium cation shown by the formula (a) or an iodonium cation shown by the formula (b), This polymer compound is suitable as a base resin of a resist composition capable of forming a resist film that allows pattern formation with extremely high resolution, small LER, and excellent rectangularity.
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公开(公告)号：US09645493B2
公开(公告)日：2017-05-09
申请号：US15091092
申请日：2016-04-05
IPC分类号： G03F7/004 , G03F7/038 , C08F220/18 , C07C381/12 , C08F220/24 , C08F220/30 , G03F1/76 , G03F1/78 , G03F7/20 , G03F7/32
CPC分类号： G03F7/038 , C07C381/12 , C08F220/18 , C08F220/24 , C08F220/30 , G03F1/76 , G03F1/78 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/039 , G03F7/0392 , G03F7/0397 , G03F7/20 , G03F7/2004 , G03F7/2059 , G03F7/327
摘要： A negative resist composition is provided comprising (A) a polymer comprising recurring units having an acid-eliminatable group and recurring units capable of generating acid upon exposure and (B) a carboxylic acid onium salt. When the negative resist composition is processed by the microprocessing technology, especially EB lithography, it forms a pattern having a very high resolution and minimal LER.
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公开(公告)号：US20160320699A1
公开(公告)日：2016-11-03
申请号：US15139831
申请日：2016-04-27
发明人： Kenji Yamada , Satoshi Watanabe
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/0048 , G03F7/0392 , G03F7/11 , G03F7/168 , G03F7/2041 , G03F7/2059 , G03F7/325 , G03F7/38
摘要： A pattern is formed by coating a resist composition comprising (A) a PPD inhibitor, (B) a polymer adapted to change its solubility in an organic solvent under the action of acid. (C) a photoacid generator, and (D) an organic solvent onto a substrate, baking, exposing the resist film, PEB, and developing in an organic solvent developer. The resist composition ensures to form a pattern in a consistent manner while inhibiting any CD shrinkage and pattern profile change due to a delay from PEB to development.
摘要翻译： 通过涂覆抗蚀剂组合物形成图案，所述抗蚀剂组合物包含（A）PPD抑制剂，（B）适于在酸的作用下改变其在有机溶剂中的溶解度的聚合物。 （C）光致酸产生剂，和（D）有机溶剂到基材上，烘烤，曝光抗蚀剂膜，PEB，并在有机溶剂显影剂中显影。 抗蚀剂组合物确保以一致的方式形成图案，同时抑制由于PEB到显影的延迟而导致的任何CD收缩和图案轮廓变化。
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9.发明申请PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MAKING PHOTOMASK 有权光电隔离膜，电阻图案形成工艺，以及制作光刻胶的方法公开(公告)号：US20160299431A1
公开(公告)日：2016-10-13
申请号：US15089788
申请日：2016-04-04
CPC分类号： G03F7/0382 , G03F1/50 , G03F1/80 , G03F7/0045 , G03F7/0046 , G03F7/039 , G03F7/09 , G03F7/093 , G03F7/11 , G03F7/2059 , G03F7/322 , G03F7/36 , G03F7/40 , G03F7/405
摘要： A photomask blank has a chemically amplified negative resist film comprising (A) a polymer comprising recurring units of specific structure and recurring units having fluorine, (B) a base resin adapted to reduce its solubility in alkaline developer under the action of acid, (C) an acid generator, and (D) a basic compound. The resist film is improved in receptivity to antistatic film.
摘要翻译： （A）包含具有特定结构的重复单元和具有氟的重复单元的聚合物，（B）适于降低其在酸性作用下在碱性显影剂中的溶解度的基础树脂（C）的化学放大阴性抗蚀剂膜，（C） ）酸产生剂，和（D）碱性化合物。 抗静电膜对抗静电膜的接受性提高。
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10.发明申请CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS 有权使用新型盐和耐酸性图案形成工艺的化学增效负极组合物公开(公告)号：US20160299428A1
公开(公告)日：2016-10-13
申请号：US15094348
申请日：2016-04-08
CPC分类号： G03F7/0045 , G03F1/20 , G03F1/22 , G03F7/0046 , G03F7/0382 , G03F7/09 , G03F7/2059 , G03F7/30 , G03F7/322
摘要： A chemically amplified negative resist composition is defined as comprising (A) an onium salt having an anion moiety which is a nitrogen-containing carboxylate of fused ring structure, (B) a base resin, and (C) a crosslinker. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.
摘要翻译： 化学放大型负性抗蚀剂组合物定义为（A）具有阴离子部分的鎓盐，其为稠环结构的含氮羧酸盐，（B）基础树脂和（C）交联剂。 抗蚀剂组合物在曝光步骤中控制酸扩散是有效的，在图案形成期间显示非常高的分辨率，并形成具有最小LER的图案。
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