Invention Application
US20160090650A1 METHOD AND APPARATUS FOR RF COMPENSATION IN PLASMA ASSISTED ATOMIC LAYER DEPOSITION
有权
用于等离子体辅助原子层沉积的RF补偿的方法和装置
- Patent Title: METHOD AND APPARATUS FOR RF COMPENSATION IN PLASMA ASSISTED ATOMIC LAYER DEPOSITION
- Patent Title (中): 用于等离子体辅助原子层沉积的RF补偿的方法和装置
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Application No.: US14502947Application Date: 2014-09-30
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Publication No.: US20160090650A1Publication Date: 2016-03-31
- Inventor: Jun Qian , Frank L. Pasquale , Adrien LaVoie , Chloe Baldasseroni , Hu Kang , Shankar Swaminathan , Purushottam Kumar , Paul Franzen , Trung T. Le , Tuan Nguyen , Jennifer Petraglia , David Charles Smith , Seshasayee Varadarajan
- Applicant: Lam Research Corporation
- Main IPC: C23C16/505
- IPC: C23C16/505 ; C23C16/52 ; C23C16/455 ; C23C16/44

Abstract:
The embodiments herein relate to methods, apparatus, and systems for depositing film on substrates. In these embodiments, the substrates are processed in batches. Due to changing conditions within a reaction chamber as additional substrates in the batch are processed, various film properties may trend over the course of a batch. Disclosed herein are methods and apparatus for minimizing the trending of film properties over the course of a batch. More specifically, film property trending is minimized by changing the amount of RF power used to process substrates over the course of the batch. Such methods are sometimes referred to as RF compensation methods.
Public/Granted literature
- US09624578B2 Method for RF compensation in plasma assisted atomic layer deposition Public/Granted day:2017-04-18
Information query
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